ZXMN6A09K_07 ZETEX [Zetex Semiconductors], ZXMN6A09K_07 Datasheet
ZXMN6A09K_07
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ZXMN6A09K_07 Summary of contents
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ZXMN6A09K 60V N-channel enhancement mode MOSFET in DPAK Summary V =60V : R =0.040 ; I (BR)DSS DS(on) Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast ...
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Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ (c) Pulsed drain current Continuous source current (body diode) Pulsed source current (body diode) Power dissipation at T =25°C amb Linear derating factor ...
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Characteristics Issue 5 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A09K 3 www.zetex.com ...
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Electrical characteristics (at T Parameter Static Drain-source breakdown voltage V Zero gate voltage drain current Gate-body leakage Gate-source threshold voltage Static drain-source on-state (*) resistance (*)(‡) Forward transconductance (‡) Dynamic Input capacitance Output capacitance Reverse transfer capacitance (†) (‡) Switching ...
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Typical characteristics Issue 5 - January 2007 © Zetex Semiconductors plc 2007 ZXMN6A09K 5 www.zetex.com ...
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Typical characteristics Charge Basic gate charge waveform V DS 90% 10 d(on (on) Switching time waveforms Issue 5 - January 2007 © Zetex Semiconductors plc 2007 ...
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Package outline - DPAK DIM Inches Min Max A 0.086 0.094 A1 - 0.005 b 0.020 0.035 b2 0.030 0.045 b3 0.205 0.215 c 0.018 0.024 c2 0.018 0.023 D 0.213 0.245 D1 0.205 - E 0.250 0.265 E1 0.170 ...
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Definitions Product change Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or service. Customers are solely responsible for obtaining the latest relevant information before placing orders. Applications disclaimer The ...