IXFH12N100F_03 IXYS [IXYS Corporation], IXFH12N100F_03 Datasheet
IXFH12N100F_03
Manufacturer Part Number
IXFH12N100F_03
Description
HiPerRF Power MOSFETs
Manufacturer
IXYS [IXYS Corporation]
Datasheet
1.IXFH12N100F_03.pdf
(2 pages)
HiPerRF
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated, Low Q
Intrinsic R
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2003 IXYS CORPORATION, All Rights Reserved
D25
DM
AR
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
g
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
T
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
, High dV/dt, Low t
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
J
C
TM
GS
DS
GS
DS
GS
GS
≤ 150°C, R
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
DM
, di/dt < 100A/μs, V
GS
DSS
, I
D
D
D
= 1mA
= 4mA
G
= 0.5 • I
DS
= 2Ω
= 0V
g
, Low
D25
GS
rr
, Note 1
= 1MΩ
DD
T
≤ V
J
= 125°C
DSS
JM
IXFH12N100F
IXFT12N100F
1000
3.0
-55 ... +150
-55 ... +150
Min.
Characteristic Values
Maximum Ratings
1.13/10
1000
1000
± 20
± 30
300
150
300
260
12
48
12
Typ.
20
1
4
6
± 100 nA
1.05
Max.
Nm/lb.in.
5.5
1.5 mA
50
V/ns
μA
°C
°C
°C
°C
°C
W
g
Ω
V
V
V
V
A
A
A
V
V
g
J
V
I
R
t
Features
Applications
Advantages
TO-247 (IXFH)
TO-268 (IXFT)
G = Gate
S = Source
D25
rr
RF amplifiers
RF capable MOSFETs
Double metal process for low gate
resistance
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
13.5 MHz industrial applications
Pulse generation
Laser drivers
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Space savings
High power density
DSS
DS(on)
G
S
=
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
D
TAB = Drain
1000V
= Drain
12A
1.05Ω Ω Ω Ω Ω
250ns
DS98856A(01/03)
TAB
TAB
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IXFH12N100F_03 Summary of contents
Page 1
HiPerRF TM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Q , Low g Intrinsic R , High dV/dt, Low t g Symbol Test Conditions 25°C to 150°C DSS 25°C ...
Page 2
Symbol Test Conditions (T = 25°C unless otherwise specified 10V 0.5 • iss 0V 25V 1MHz oss rss t ...