IXFH14N100Q2_08 IXYS [IXYS Corporation], IXFH14N100Q2_08 Datasheet
IXFH14N100Q2_08
Manufacturer Part Number
IXFH14N100Q2_08
Description
HiPerFET Power MOSFETs Q2-Class
Manufacturer
IXYS [IXYS Corporation]
Datasheet
1.IXFH14N100Q2_08.pdf
(4 pages)
HiPerFET
Power MOSFETs
Q2-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
Low intrinsic R
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
M
Weight
Symbol
(T
V
V
I
I
R
D25
DM
A
GSS
DSS
© 2008 IXYS CORPORATION, All rights reserved
J
L
DGR
GSS
GSM
AS
D
JM
stg
DSS
DSS
GS(th)
d
DS(on)
J
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.063 in) from case for 10s
Mounting torque
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±30V, V
= V
= 0V
= 10V, I
TM
g
, low t
DM
DSS
, V
GS
, I
DD
D
D
D
= 250μA
= 4mA
≤ V
rr
= 0.5 • I
DS
DSS
= 0V
, T
D25,
J
GS
≤ 150°C
= 1MΩ
Note 1
Preliminary Technical Information
T
J
= 125°C
g
JM
IXFH14N100Q2
Characteristic Values
1000
-55 ... +150
-55 ... +150
Min.
3.0
Maximum Ratings
1.13/10
1000
1000
150
500
300
±30
±40
Typ.
2.5
14
56
14
20
6
±200
Nm/lb.in.
950
Max.
5.5
25
1 mA
V/ns
mΩ
μA
nA
°C
°C
°C
°C
W
g
J
V
V
V
V
A
A
A
V
V
V
I
R
t
TO-247 (IXFH)
G = Gate
S = Source
Features
Applications
Advantages
D25
rr
resistance
Double metal process for low gate
International standard package
Epoxy meet UL 94 V-0, flammability
classification
Avalanche energy and current rated
Fast intrinsic Rectifier
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Easy to mount
Space savings
High power density
DSS
DS(on)
G
D
≤ ≤ ≤ ≤ ≤
= 1000V
= 14A
≤ ≤ ≤ ≤ ≤ 950mΩ Ω Ω Ω Ω
S
300ns
D
TAB = Drain
DS99073A(5/08)
= Drain
(TAB)
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IXFH14N100Q2_08 Summary of contents
Page 1
HiPerFET TM Power MOSFETs Q2-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Q Low intrinsic R , low Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C, R ...
Page 2
Symbol Test Conditions (T = 25°C, unless otherwise specified 10V 0.5 • Note D25 C iss 0V 25V 1MHz oss GS ...
Page 3
Fig. 1. Output Characteristics @ 25º Volts DS Fig. 3. Output Characteristics @ 125º ...
Page 4
Fig. 7. Input Admittance º º º 4.0 4.5 5.0 5 ...