IXFH60N20F_08 IXYS [IXYS Corporation], IXFH60N20F_08 Datasheet
IXFH60N20F_08
Manufacturer Part Number
IXFH60N20F_08
Description
HiPerRF Power MOSFET F-Class: MegaHertz Switching
Manufacturer
IXYS [IXYS Corporation]
Datasheet
1.IXFH60N20F_08.pdf
(2 pages)
HiPerRF
Power MOSFET
F-Class: MegaHertz Switching
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
(T
BV
V
I
I
R
© 2008 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
Maximum lead temperature for soldering
Plastic body for 10s
Mounting torque (TO-247)
TO-247
TO-268
Test Conditions
V
V
V
V
V
V
S
J
J
C
C
C
C
C
TM
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ± 20V, V
= V
= 0V
= 10V, I
DM
, V
GS
DSS
, I
D
DD
D
D
= 1mA
= 4mA
= 0.5 • I
≤ V
DS
DSS
= 0V
, T
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
Advance Technical Information
T
J
= 125°C
JM
IXFH60N20F
IXFT60N20F
200
-55 ... +150
-55 ... +150
Min.
3.0
Characteristic Values
Maximum Ratings
1.13/10
± 20
± 30
200
200
240
320
150
300
260
1.5
Typ.
60
60
10
6
4
± 100
Max.
Nm/lb.in.
5.0
1.5 mA
38
50
V/ns
mΩ
nA
μA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
g
V
V
J
g
V
I
R
t
TO-247
TO-268
G = Gate
S = Source
Features
Advantages
Applications:
D25
rr
International standard packages
Avalanche Rated
RF capable MOSFETs
Double metal process for low gate
Low package inductance
Fast intrinsic diode
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC-DC Converters
Laser Drivers
13.5 Mhz industrial applications
Pulse generation
resistnace
Easy to mount
Space savings
High power density
DS(on)
DSS
G
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤
= 60A
S
D
TAB = Drain
200V
38mΩ Ω Ω Ω Ω
200ns
= Drain
DS98885A(11/08)
TAB
TAB
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IXFH60N20F_08 Summary of contents
Page 1
HiPerRF TM Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol Test Conditions 25°C to 150°C DSS 25°C to 150°C, R DGR J V Continuous GSS V Transient ...
Page 2
Symbol Test Conditions (T = 25°C unless otherwise specified 10V 0.5 • iss 0V 25V 1MHz oss rss t ...