BSS138N_09 INFINEON [Infineon Technologies AG], BSS138N_09 Datasheet
BSS138N_09
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BSS138N_09 Summary of contents
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SIPMOS Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant Type Package BSS138N PG-SOT-23 BSS138N PG-SOT-23 Parameter Continuous drain current Pulsed drain current Reverse diode dv /dt Gate source ...
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Parameter Thermal characteristics Thermal resistance, junction - minimal footprint Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance Rev. 2.82 Symbol Conditions R thJA =25 °C, unless ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation P =f(T ) tot A 0.4 0.3 0.2 0 Safe operating area I =f =25 ° parameter limited by on-state resistance ...
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Typ. output characteristics I =f =25 ° parameter 0 0.5 0.4 0.3 0.2 0 Typ. transfer characteristics I =f(V ); ...
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Drain-source on-state resistance R =f =0. DS(on % -60 - Typ. capacitances C =f MHz ...
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Typ. gate charge V =f =0.23 A pulsed GS gate D parameter 0.2 0.4 Q gate Rev. 2.82 14 Drain-source breakdown voltage V =f(T BR(DSS) ...
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Package Outline: Footprint: Dimensions in mm Rev. 2.82 Packaging: page 8 BSS138N 2009-02-11 ...
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Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of ...