BSS138W_09 INFINEON [Infineon Technologies AG], BSS138W_09 Datasheet
BSS138W_09
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BSS138W_09 Summary of contents
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SIPMOS Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant Type Package BSS138W PG-SOT-323 BSS138W PG-SOT-323 Maximum ratings =25 °C, unless otherwise specified j Parameter Continuous drain ...
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Parameter Thermal characteristics Thermal resistance, junction - minimal footprint Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance Rev. 2.41 Symbol Conditions R thJA =25 °C, unless ...
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Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...
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Power dissipation P =f(T ) tot A 0.5 0.4 0.3 0.2 0 Safe operating area I =f =25 ° parameter limited by on-state ...
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Typ. output characteristics I =f =25 ° parameter 0 0.5 0.4 0.3 0.2 0 Typ. transfer characteristics I =f(V ); ...
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Drain-source on-state resistance =10 V DS(on % -60 - Typ. capacitances C =f MHz; T ...
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Typ. gate charge V =f =0.2 A pulsed GS gate D parameter 0.2 0.4 Q Rev. 2.41 14 Drain-source breakdown voltage V =f(T BR(DSS) 70 ...
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Package Outline: Footprint: Rev. 2.41 Packaging: page 8 BSS138W 2009-11-19 ...
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Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to ...