2SK2311_09 TOSHIBA [Toshiba Semiconductor], 2SK2311_09 Datasheet

2SK2311_09

Manufacturer Part Number

2SK2311_09

Description

Chopper Regulator, DC−DC Converter and Switching Regulator Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK2311_09.pdf (6 pages)

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Chopper Regulator, DC−DC Converter and Switching

Regulator Applications

Absolute Maximum Ratings

Thermal Characteristics

4-V gate drive

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature, etc.)

may cause this product to decrease in the reliability significantly even if the

operating conditions (i.e. operating temperature/current/voltage, etc.) are

within the absolute maximum ratings. Please design the appropriate reliability

upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual reliability data

(i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L

= 25 V, T

Pulse (Note 1)

DC (Note 1)

= 20 kΩ)

: I

: V

DSS

= 25°C (initial), L = 339 μH, R

(Note 2)

= 0.8 to 2.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

: R

: |Y

DGR

GSS

DSS

stg

DS (ON)

Symbol

2SK2311

th (ch−a)

th (ch−c)

| = 16 S (typ.)

= 10 V, I

= 36 mΩ (typ.)

−55 to 150

= 60 V)

Rating

±20

100

156

150

3.5

3.125

Max

83.3

= 25 Ω, I

= 1 mA)

°C / W

Unit

°C

= 25 A

Weight: 1.5 g (typ.)

JEDEC

JEITA

TOSHIBA

JEDEC

JEITA

TOSHIBA

−π−MOSV)

2-10S1B

2-10S2B

2009-09-29

―

2SK2311

Unit: mm

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