2SK2381_06

Manufacturer Part Number2SK2381_06
DescriptionSilicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Motor Drive Applications
ManufacturerTOSHIBA [Toshiba Semiconductor]
2SK2381_06 datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
Page 1/6

Download datasheet (674Kb)Embed
Next
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
: I
DSS
Enhancement mode
: V
th
Absolute Maximum Ratings
Characteristics
Drain−source voltage
Drain−gate voltage (R
= 20 kΩ)
GS
Gate−source voltage
DC
(Note 1)
Drain current
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
= 50 V, T
= 25°C (initial), L = 4.2 mH, R
DD
ch
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
2SK2381
: R
= 0.56 Ω (typ.)
DS (ON)
: |Y
| = 4.5 S (typ.)
fs
= 100 μA (max) (V
= 200 V)
DS
= 1.5~3.5 V (V
= 10 V, I
= 1 mA)
DS
D
(Ta = 25°C)
Symbol
Rating
Unit
V
200
V
DSS
V
200
V
DGR
V
±20
V
GSS
I
5
A
D
I
20
A
DP
P
25
W
D
E
65
mJ
AS
I
5
A
AR
E
2.5
mJ
AR
T
150
°C
ch
T
−55~150
°C
stg
Symbol
Max
Unit
5.0
°C / W
R
th (ch−c)
R
62.5
°C / W
th (ch−a)
= 25 Ω, I
G
AR
1
2SK2381
2
−π−MOSV)
JEDEC
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
= 5 A
2006-11-21
Unit: mm

2SK2381_06 Summary of contents

  • Page 1

    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I DSS Enhancement mode : V th Absolute Maximum Ratings ...

  • Page 2

    Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...

  • Page 3

    3 2SK2381 2006-11-21 ...

  • Page 4

    4 2SK2381 2006-11-21 ...

  • Page 5

    Ω 4 2SK2381 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − ⎝ VDSS DD ⎠ ...

  • Page 6

    RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...