2SK2381_09 TOSHIBA [Toshiba Semiconductor], 2SK2381_09 Datasheet

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2SK2381_09

Manufacturer Part Number
2SK2381_09
Description
Chopper Regulator, DC−DC Converter and Motor Drive Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Chopper Regulator, DC−DC Converter and Motor Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L
= 50 V, T
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
= 25°C (initial), L = 4.2 mH, R
: I
: V
(Note 1)
(Note 2)
DSS
th
= 1.5 to 3.5 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
I
DP
AR
stg
AS
AR
D
ch
D
DS (ON)
2SK2381
fs
| = 4.5 S (typ.)
DS
= 0.56 Ω (typ.)
−55 to 150
= 10 V, I
DS
Rating
Max
62.5
200
200
±20
150
2.5
5.0
20
25
65
G
= 200 V)
5
5
1
= 25 Ω, I
D
= 1 mA)
°C / W
°C / W
AR
Unit
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
A
= 5 A
Weight: 1.9 g (typ.)
JEDEC
JEITA
TOSHIBA
2
−π−MOSV)
2-10R1B
SC-67
2009-09-29
2SK2381
Unit: mm

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