2SK2382_09

Manufacturer Part Number2SK2382_09
DescriptionSwitching Regulator, DC−DC Converter and Motor Drive Applications
ManufacturerTOSHIBA [Toshiba Semiconductor]
2SK2382_09 datasheet
 


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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
Switching Regulator, DC−DC Converter and Motor Drive
Applications
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
: I
DSS
Enhancement mode
: V
th
Absolute Maximum Ratings
Characteristics
Drain−source voltage
Drain−gate voltage (R
= 20 kΩ)
GS
Gate−source voltage
DC
(Note 1)
Drain current
Pulse (Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Thermal resistance, channel to case
Thermal resistance, channel to ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
= 50 V, T
= 25°C (initial), L = 1.2 mH, R
DD
ch
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
2SK2382
: R
= 0.13 Ω (typ.)
DS (ON)
: |Y
| = 17 S (typ.)
fs
= 100 μA (max) (V
= 200 V)
DS
= 1.5 to 3.5 V (V
= 10 V, I
= 1 mA)
DS
D
(Ta = 25°C)
Symbol
Rating
Unit
V
200
DSS
V
200
DGR
V
±20
GSS
I
15
D
I
45
DP
P
45
D
E
166
mJ
AS
I
15
AR
E
4.5
mJ
AR
T
150
°C
ch
T
−55 to 150
°C
stg
Symbol
Max
Unit
R
2.78
°C / W
th (ch−c)
R
62.5
°C / W
th (ch−a)
= 25 Ω, I
G
AR
1
2SK2382
V
V
V
A
A
JEDEC
―
W
JEITA
SC-67
TOSHIBA
2-10R1B
A
Weight: 1.9 g (typ.)
= 15 A
2009-09-29
Unit: mm

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2SK2382_09 Summary of contents

  • Page 1

    TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) Switching Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I DSS Enhancement mode : V th Absolute Maximum Ratings ...

  • Page 2

    Electrical Characteristics Characteristics Gate leakage current Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off time Total gate ...

  • Page 3

    3 2SK2382 2009-09-29 ...

  • Page 4

    4 2SK2382 2009-09-29 ...

  • Page 5

    Ω 1 2SK2382 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − VDSS DD ⎝ ⎠ ...

  • Page 6

    RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...

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