2SK2503_1 ROHM [Rohm], 2SK2503_1 Datasheet
2SK2503_1
Related parts for 2SK2503_1
2SK2503_1 Summary of contents
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Transistors 4V Drive Nch MOS FET 2SK2503 Structure Silicon N-channel MOS FET Features 1) Low On-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area drive. 5) Drive circuits can be simple. 6) Parallel use is easy. ...
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Transistors Electrical characteristics (Ta=25°C) Parameter Symbol Gate-source leakage Drain-source breakdown voltage V Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off ...
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Transistors Electrical characteristics curve 0 25°C Single pulse 0.1 0 100 (V) DRAIN-SOURCE VOLTAGE : V DS Fig.1 Maximum Safe Operating Area 4.0 = 10V ...
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Transistors 10 = Pulsed 5 Ta=125°C 75°C 2 25°C −25°C 1 0.5 0.2 0.1 0.05 0 0.5 1.0 1.5 (V) SOURCE-DRAIN VOLTAGE : V SD Fig.10 Reverse Drain Current vs. Source-Drain Voltage ( Ι ) 1000 Ta=25°C =30V ...
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Transistors Switching characteristics measurement circuit D.U. Fig.15 Switching Time Test Circuit Pulse Width 90% 50 10 d(on d(off) ...
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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...