2SK2601_06 TOSHIBA [Toshiba Semiconductor], 2SK2601_06 Datasheet

2SK2601_06

Manufacturer Part Number

2SK2601_06

Description

Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK2601_06.pdf (6 pages)

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DC−DC Converter, Relay Drive and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to

ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

= 90 V, T

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)

Pulse (Note 1)

= 20 kΩ)

= 25°C (initial), L = 4.59 mH, R

(Note 1)

(Note 2)

: I

: V

DSS

= 2.0~4.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

th (ch−c)

th (ch−a)

: R

: |Y

DGR

GSS

DSS

stg

DS (ON)

2SK2601

| = 7.0 S (typ.)

= 0.75 Ω (typ.)

= 10 V, I

−55~150

Rating

12.5

Max

500

±30

125

270

150

1.0

= 500 V)

= 25 Ω, I

= 1 mA)

°C / W

Unit

°C

= 10 A

Weight: 4.6 g (typ.)

JEDEC

JEITA

TOSHIBA

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

2-16C1B

SC-65

2006-11-02

―

2SK2601

Unit: mm

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2SK2601_06 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I DSS Enhancement mode : V th Absolute Maximum Ratings ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off ...

Page 3

3 2SK2601 2006-11-02 ...

Page 4

4 2SK2601 2006-11-02 ...

Page 5

Ω 4. 2SK2601 1 ⎛ B ⎞ VDSS = ⋅ L ⋅ ⋅ ⎜ ⎟ − ⎝ ⎠ VDSS DD ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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