2SK2602_10 TOSHIBA [Toshiba Semiconductor], 2SK2602_10 Datasheet
2SK2602_10
Manufacturer Part Number
2SK2602_10
Description
Switching Regulator Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK2602_10.pdf
(6 pages)
Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON-resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
DD
= 90 V, T
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
: I
: V
= 25°C (initial), L = 16.8 mH, R
(Note 1)
(Note 2)
DSS
th
= 2.0 to 4.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
I
DP
AR
stg
AS
AR
D
ch
D
DS (ON)
2SK2602
fs
| = 5.5 S (typ.)
DS
= 0.9 Ω (typ.)
= 10 V, I
DS
−55 to 150
Rating
12.5
Max
600
600
±30
125
345
150
= 600 V)
1.0
24
50
6
6
1
G
= 25 Ω, I
D
= 1 mA)
°C / W
°C / W
Unit
Unit
AR
mJ
mJ
°C
°C
W
V
V
V
A
A
A
= 6 A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
2-16C1B
SC-65
2010-04-13
―
2SK2602
Unit: mm
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2SK2602_10 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) Switching Regulator Applications Low drain−source ON-resistance High forward transfer admittance Low leakage current : I DSS Enhancement mode : V = 2 Absolute Maximum Ratings ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off ...
Page 3
3 2SK2602 2010-04-13 ...
Page 4
4 2SK2602 2010-04-13 ...
Page 5
Ω 16 2SK2602 1 ⎛ B ⎞ VDSS ⋅ L ⋅ ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD ...
Page 6
RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...