2SK2607_06 TOSHIBA [Toshiba Semiconductor], 2SK2607_06 Datasheet

no-image

2SK2607_06

Manufacturer Part Number
2SK2607_06
Description
Silicon N Channel MOS Type Chopper Regulator, DC−DC Converter and Moter Drive Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Chopper Regulator, DC−DC Converter and Moter Drive
Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DD
Characteristic
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
= 90 V, T
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
= 25°C (initial), L = 17.4 mH, R
(Note 1)
(Note 2)
: I
: V
DSS
th
= 2.0~4.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
I
DP
AR
stg
AS
AR
D
ch
D
DS (ON)
2SK2607
fs
|
=
7.0 S (typ.)
DS
= 1.0 Ω (typ.)
= 10 V, I
−55~150
Rating
DS
0.883
Max
800
800
±30
150
778
150
27
15
50
9
9
1
G
= 640 V)
= 25 Ω, I
D
= 1 mA)
°C / W
°C / W
Unit
Unit
AR
mJ
mJ
°C
°C
W
V
V
V
A
A
= 9 A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
2-16C1B
SC-65
2006-11-10
2SK2607
Unit: mm

Related parts for 2SK2607_06

2SK2607_06 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) Chopper Regulator, DC−DC Converter and Moter Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I DSS Enhancement mode : V th Absolute Maximum Ratings ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off ...

Page 3

3 2SK2607 2006-11-10 ...

Page 4

4 2SK2607 2006-11-10 ...

Page 5

Ω 17 2SK2607 1 ⎛ B ⎞ VDSS ⋅ ⋅ ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD ...

Page 6

RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

Related keywords