2SK2824_07 TOSHIBA [Toshiba Semiconductor], 2SK2824_07 Datasheet
2SK2824_07
Manufacturer Part Number
2SK2824_07
Description
Silicon N Channel MOS Type For Portable Equipment
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK2824_07.pdf
(5 pages)
For Portable Equipment
High Speed Switch Applications
Analog Switch Applications
•
•
•
•
Marking
Absolute Maximum Ratings
High input impedance
1.5 V gate drive
Low gate threshold voltage: V
Small package
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Note: This transistor is electrostatic sensitive device.
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Please handle with caution.
Characteristics
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
th
Equivalent Circuit
= 0.5~1.0 V
(Ta = 25°C)
Symbol
V
V
T
T
P
GSS
I
DS
stg
D
ch
D
2SK2824
−55~150
Rating
100
100
150
20
10
1
Unit
mW
mA
°C
°C
V
V
Weight: 0.006 g (typ.)
JEDEC
JEITA
TOSHIBA
2-2E1E
SC-70
2007-11-01
―
2SK2824
Unit: mm
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2SK2824_07 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type For Portable Equipment High Speed Switch Applications Analog Switch Applications • High input impedance • 1.5 V gate drive • Low gate threshold voltage • Small package Marking Absolute ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance 1 Drain-source ON resistance 2 Drain-source ON resistance 3 Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching ...
Page 3
3 2SK2824 2007-11-01 ...
Page 4
4 2SK2824 2007-11-01 ...
Page 5
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...