NTE50 NTE [NTE Electronics], NTE50 Datasheet
NTE50
Manufacturer Part Number
NTE50
Description
Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver
Manufacturer
NTE [NTE Electronics]
Datasheet
1.NTE50.pdf
(2 pages)
Description:
The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case
designed for general purpose, high voltage amplifier and driver applications.
Features:
D High Collector Breakdown Voltage: V
D High Power Dissipation: P
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Power Dissipation (T
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Thermal Resistance, Junction–to–Ambient, R
Note 1. NTE49 is a discontinued device and no longer available.
Derate Above 25 C
Derate Above 25 C
General Purpose, High Voltage Amp, Driver
Silicon Complementary Transistors
EB
A
CB
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C), P
= +25 C), P
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE49 (NPN) & NTE50 (PNP)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
stg
C
= 10W @ T
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
D
(BR)CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
= +25 C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 100V Min @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= 1mA
–55 to +150 C
–55 to +150 C
80mW/ C
12.5 C/W
125 C/W
8mW/ C
100V
120V
10W
1W
4V
2A
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NTE50 Summary of contents
Page 1
... Silicon Complementary Transistors General Purpose, High Voltage Amp, Driver Description: The NTE49 (NPN) and NTE50 (PNP) are silicon complementary transistors in a TO202 type case designed for general purpose, high voltage amplifier and driver applications. Features: D High Collector Breakdown Voltage High Power Dissipation: P Absolute Maximum Ratings: Collector– ...
Page 2
Electrical Characteristics: (T Parameter OFF Characteristics Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current ON Characteristics (Note 2) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter ON Voltage Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Note 2. Pulse Test: Pulse ...