AT28BV16-25 ATMEL Corporation, AT28BV16-25 Datasheet

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AT28BV16-25

Manufacturer Part Number
AT28BV16-25
Description
16K 2K x 8 Battery-Voltage CMOS E2PROM
Manufacturer
ATMEL Corporation
Datasheet

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Features
Description
The AT28BV16 is a low-power, high-performance Electrically Erasable and Program-
mable Read Only Memory with easy to use features. The AT28BV16 is a 16K mem-
ory organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s
reliable nonvolatile CMOS technology.
The AT28BV16 is accessed like a static RAM for the read or write cycles without the
need of external components. During a byte write, the address and data are latched
Pin Configurations
Pin Name
A0 - A10
CE
OE
WE
I/O0 - I/O7
NC
DC
2.7 to 3.6V Supply
Low Power Dissipation
Read Access Time - 250 ns
Byte Write - 3 ms
Direct Microprocessor Control
High Reliability CMOS Technology
Low Voltage CMOS Compatible Inputs and Outputs
JEDEC Approved Byte Wide Pinout
Commercial and Industrial Temperature Ranges
Full Read and Write Operation
8 mA Active Current
50 A CMOS Standby Current
DATA Polling
READ/BUSY Open Drain Output on TSOP
Endurance: 100,000 Cycles
Data Retention: 10 Years
Function
Addresses
Chip Enable
Output Enable
Write Enable
Data Inputs/Outputs
No Connect
Don’t Connect
PDIP, SOIC
Top View
Top View
PLCC
Top View
TSOP
(continued)
AT28BV16
AT28BV16
16K (2K x 8)
Battery-Voltage
CMOS
E
2
PROM
2-119
0308A

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AT28BV16-25 Summary of contents

Page 1

... The device is manufactured with Atmel’s reliable nonvolatile CMOS technology. The AT28BV16 is accessed like a static RAM for the read or write cycles without the need of external components. During a byte write, the address and data are latched ...

Page 2

... Respect to Ground ................... -0.6V to +6.25V All Output Voltages with Respect to Ground .............-0. Voltage on OE and A9 with Respect to Ground ................... -0.6V to +13.5V AT28BV16 2-120 The CMOS technology offers fast access times of 250 ns at low power dissipation. When the chip is deselected the standby current is less than 50 A. ...

Page 3

... Device Operation READ: The AT28BV16 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in a high im- pedance state whenever high. This dual line control gives designers increased flexibility in preventing bus contention ...

Page 4

... Standby Current CMOS Active Current Input Low Voltage IL V Input High Voltage IH V Output Low Voltage OL V Output High Voltage OH AT28BV16 2-122 AT28BV16-25 0°C - 70°C -40°C - 85°C 2. ...

Page 5

... Input Test Waveforms and Measurement Level < Pin Capacitance ( MHz 25° OUT Note: 1. This parameter is characterized and is not 100% tested. AT28BV16-25 Min after the address specified from whichever occurs first pF). ACC ...

Page 6

... Data Set-up Time Data, OE Hold Time DH OEH and Set-up and Hold Time Write Cycle Time WC t Time to Device Busy DB AC Write Waveforms WE Controlled CE Controlled AT28BV16 2-124 Min Max Units 10 ns 100 ns 150 1000 ns 100 3 ...

Page 7

... Data Polling Characteristics Symbol Parameter t Data Hold Time Hold Time OEH Output Delay OE Write Recovery Time t WR Notes: 1. These parameters are characterized and not 100% tested. 2. See AC Characteristics. Data Polling Waveforms (1) Min 10 10 (2) 0 AT28BV16 Typ Max Units 2-125 ...

Page 8

... Lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC) AT28BV16 2-126 Ordering Code Package AT28BV16-25TC 28T AT28BV16-25JC 32J AT28BV16-25PC 24P6 AT28BV16-25SC 24S AT28BV16-25TI 28T AT28BV16-25JI 32J AT28BV16-25PI 24P6 AT28BV16-25SI 24S AT28BV16-30TC 28T AT28BV16-30JC 32J AT28BV16-30PC 24P6 AT28BV16-30SC 24S AT28BV16-30TI 28T ...

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