AT28BV64B-25JC ATMEL Corporation, AT28BV64B-25JC Datasheet - Page 2

• Manufacturer Part Number: AT28BV64B-25JC
• Description: 64K (8K x 8) Battery-Voltage Parallel EEPROM with Page Write and Software Data Protection
• Manufacturer: ATMEL Corporation

The AT28BV64B is accessed like a static RAM for the read
or write cycle without the need for external components.
The device contains a 64 byte page register to allow writing
of up to 64 bytes simultaneously. During a write cycle, the
addresses and 1 to 64 bytes of data are internally latched,
freeing the address and data bus for other operations. Fol-
lowing the initiation of a write cycle, the device will automat-
ically write the latched data using an internal control timer.
The end of a write cycle can be detected by DATA polling of
Block Diagram
Absolute Maximum Ratings*
2
Temperature Under Bias................................ -55 C to +125 C
Storage Temperature ..................................... -65 C to +150 C
All Input Voltages
(including NC Pins)
with Respect to Ground ...................................-0.6V to +6.25V
All Output Voltages
with Respect to Ground .............................-0.6V to V
Voltage on OE and A9
with Respect to Ground ...................................-0.6V to +13.5V
AT28BV64B
CC
+ 0.6V
I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s AT28BV64B has additional features to ensure high
quality and manufacturability. A software data protection
mechanism guards against inadvertent writes. The device
also includes an extra 64 bytes of EEPROM for device
identification or tracking.
*NOTICE:
Stresses beyond those listed under “Absolute
Maximum Ratings” may cause permanent dam-
age to the device. This is a stress rating only and
functional operation of the device at these or any
other conditions beyond those indicated in the
operational sections of this specification is not
implied. Exposure to absolute maximum rating
conditions for extended periods may affect
device reliability