M58BW016BB ST Microelectronics, M58BW016BB Datasheet - Page 32

• Manufacturer Part Number: M58BW016BB
• Description: 16 Mbit 512Kb x32 / Boot Block / Burst 3V Supply Flash Memories
• Manufacturer: ST Microelectronics

M58BW016BT, M58BW016BB, M58BW016DT, M58BW016DB
Table 15. DC Characteristics
32/63
Symbol
V
V
V
V
I
I
I
I
I
V
I
I
I
I
V
I
V
V
I
DDB
DD1
DD2
DD3
DD4
I
V
PPLK
PP1
PP2
PP3
PP4
I
PPH
DD
PP1
LKO
LO
PP
OH
LI
OL
IH
IH
IL
Input Leakage Current
Output Leakage Current
Supply Current (Random Read)
Supply Current (Burst Read)
Supply Current (Standby)
Supply Current (Auto Low-Power)
Supply Current (Reset/Power-down)
Supply Current (Program or Erase,
Set Lock Bit, Erase Lock Bit)
Supply Current
(Erase/Program Suspend)
Program Current (Read or Standby)
Program Current (Read or Standby)
Program Current (Power-down)
Program Current (Program)
Program in Progress
Program Current (Erase)
Erase in Progress
Input Low Voltage
Input High Voltage (for DQ lines)
Input High Voltage (for Input only
lines)
Output Low Voltage
Output High Voltage CMOS
Program Voltage
(Program or Erase operations)
Program Voltage
(Program or Erase operations)
V
Program lockout)
V
Program lockout)
DD
PP
Supply Voltage (Erase and
Supply Voltage (Erase and
Parameter
E = V
Program, Block Erase in
E = V
E = RP = V
IL
RP = V
RP = V
Test Condition
0V V
E = V
, G = V
0V V
I
IL
OH
I
V
V
V
V
V
OL
V
, G = V
progress
RP = V
PP
PP
PP
PP
PP
E = V
PP
56MHz
= –100µA
OUT
= 100µA
SS
IN
DD
= V
= V
SS
= V
= V
IH
V
DD
V
± 0.2V,
, f
V
± 0.2V
± 0.2V
IH
PP1
IH
PPH
PPH
V
PP1
PP1
PP1
IL
DDQ
add
DDQ
± 0.2V
, f
clock
= 6MHz
=
V
0.8V
0.8V
DDQ
–0.5
11.4
Min
2.7
DDQIN
DDQIN
–0.1
0.2V
V
DDQ
Max
± 30
± 30
12.6
11.4
200
200
± 5
3.6
0.1
3.6
2.2
±1
±5
20
30
60
60
60
30
40
20
20
DDQIN
+0.3
Unit
mA
mA
mA
mA
mA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
V
V
V
V
V
V
V
V
V