M5M5W816WG-10H Mitsubishi, M5M5W816WG-10H Datasheet

M5M5W816WG-10H

Manufacturer Part Number

M5M5W816WG-10H

Description

8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

Manufacturer

Mitsubishi

Datasheet

1.M5M5W816WG-10H.pdf (8 pages)

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1999.1.15

M5M5W816WG -85L, 10L, 85H, 10H

PIN CONFIGURATION

organized as 524288-words by 16-bit, fabricated by Mitsubishi's

high-performance 0.18µm CMOS technology.

simple interfacing , battery operating and battery backup are the

important design objectives.

with the outline of 7.0mm x 8.5mm, ball matrix of 6 x 8 (48ball)

and ball pitch of 0.75mm. It gives the best solution for a compaction

of mounting area as well as flexibility of wiring pattern of printed

circuit boards.

into two versions; "Standard" and "I-version".

DESCRIPTION

The M5M5W816 is a family of low voltage 8-Mbit static RAMs

The M5M5W816 is suitable for memory applications where a

M5M5W816WG is packaged in a CSP (chip scale package),

From the point of operating temperature, the family is divided

-40 ~ +85°C

temperature

Outline:

NC: No Connection

Standard

0 ~ +70°C

Operating

I-version

Version,

48FHA

Ver. 0.1

M5M5W816WG -85L

M5M5W816WG -10L

M5M5W816WG -85H

M5M5W816WG -10H

M5M5W816WG -85LI

M5M5W816WG -10LI

M5M5W816WG -85HI

M5M5W816WG -10HI

Part name

DQ10

DQ15

DQ16

GND

DQ9

VCC

BC1

A18

DQ11

DQ12

DQ13

DQ14

BC2

N.C.

-85LI, 10LI, 85HI, 10HI

(TOP VIEW)

GND

A12

A17

A14

1.8 ~ 2.7V

A10

Supply

A16

A15

A13

Power

DQ2

DQ5

DQ4

DQ6

A11

MITSUBISHI ELECTRIC

GND

DQ1

DQ3

VCC

DQ7

DQ8

N.C.

8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

Access time

100ns

85ns

max.

Those are summarized in the part name table below.

25°C 40°C

0.1

- Single 1.8~2.7V power supply

- Small stand-by current: 0.1µA (2.7V, typ.)

- No clocks, No refresh

- Data retention supply voltage =1.0V

- All inputs and outputs are TTL compatible.

- Easy memory expansion by S1, S2, BC1 and BC2

- Common Data I/O

- Three-state outputs: OR-tie capability

- OE prevents data contention in the I/O bus

- Process technology: 0.18µm CMOS

- Package: 48ball 7.0mm x 8.5mm CSP

* Typical

Stand-by current (Vcc=2.7V)

FEATURES

0.2

DQ1 ~ DQ16

* Typical parameter indicates the value for the center

of distribution, and not 100% tested.

25°C

PRELIMINARY

A0 ~ A18

---

GND

BC1

BC2

Vcc

Notice: This is not a final specification.

Some parametric limits are subject to change

Ratings (max.)

40°C

---

Address input

Data input / output

Chip select input 1

Chip select input 2

Write control input

Output enable input

Upper Byte (DQ9 ~ 16)

Power supply

Ground supply

Lower Byte (DQ1 ~ 8)

70°C 85°C

Function

MITSUBISHI LSIs

---

(2.7V, typ.)

(10MHz)

(1MHz)

current

40mA

Active

5mA

Icc1

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M5M5W816WG-10H Summary of contents

Page 1

... The M5M5W816 is suitable for memory applications where a simple interfacing , battery operating and battery backup are the important design objectives. M5M5W816WG is packaged in a CSP (chip scale package), with the outline of 7.0mm x 8.5mm, ball matrix (48ball) and ball pitch of 0.75mm. It gives the best solution for a compaction of mounting area as well as flexibility of wiring pattern of printed circuit boards ...

Page 2

... Ver. 0.1 M5M5W816WG -85L, 10L, 85H, 10H FUNCTION The M5M5W816WG is organized as 524288-words by 16- bit. These devices operate on a single +1.8~2.7V power supply, and are directly TTL compatible to both input and output. Its fully static circuit needs no clocks and no refresh, and makes it useful. ...

Page 3

... Ver. 0.1 M5M5W816WG -85L, 10L, 85H, 10H ABSOLUTE MAXIMUM RATINGS Symbol Parameter V cc Supply voltage V Input voltage I V Output voltage O P Power dissipation d Operating T a temperature T Storage temperature stg DC ELECTRICAL CHARACTERISTICS Symbol Parameter V High-level input voltage IH V Low-level input voltage IL V High-level output voltage ...

Page 4

... Ver. 0.1 M5M5W816WG -85L, 10L, 85H, 10H AC ELECTRICAL CHARACTERISTICS (1) TEST CONDITIONS Supply voltage Input pulse Input rise time and fall time Reference level Output loads (2) READ CYCLE Symbol t Read cycle time CR t (A) Address access time a t (S1) Chip select 1 access time a t (S2) ...

Page 5

... Ver. 0.1 M5M5W816WG -85L, 10L, 85H, 10H (4)TIMING DIAGRAMS Read cycle A 0~18 BC1,BC2 (Note3) S1 (Note3) S2 (Note3) OE (Note3 "H" level DQ 1~16 Write cycle ( W control mode ) A 0~18 BC1,BC2 (Note3) S1 (Note3) S2 (Note3 1~16 -85LI, 10LI, 85HI, 10HI 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM ( ...

Page 6

... Ver. 0.1 M5M5W816WG -85L, 10L, 85H, 10H Write cycle (BC control mode) A 0~18 BC1,BC2 S1 (Note3) S2 (Note3) (Note5) W (Note3) DQ 1~16 Note 3: Hatching indicates the state is "don't care". Note 4: A Write occurs during S1 low, S2 high overlaps BC1 and/or BC2 low and W low. Note 5: When the falling edge simultaneously or prior to the falling edge of BC1 and/or BC2 or the falling edge rising edge of S2, the outputs are maintained in the high impedance state ...

Page 7

... Ver. 0.1 M5M5W816WG -85L, 10L, 85H, 10H Write cycle (S1 control mode) A 0~18 BC1,BC2 (Note3 (Note3) W (Note3) DQ 1~16 Write cycle (S2 control mode) A 0~18 BC1,BC2 (Note3 (Note3) W (Note3) DQ 1~16 -85LI, 10LI, 85HI, 10HI 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM (S1 (A) su (Note5) (Note4) ...

Page 8

... Ver. 0.1 M5M5W816WG -85L, 10L, 85H, 10H POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS Symbol Parameter Vcc Power down supply voltage (PD (BC) Byte control input BC1 & BC2 V I (S1) Chip select input (S2) Chip select input S2 Power down Icc (PD) supply current ...

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