HM62256 Hitachi Semiconductor, HM62256 Datasheet - Page 11

• Manufacturer Part Number: HM62256
• Description: 32/768-word x 8-bit High Speed CMOS Static RAM
• Manufacturer: Hitachi Semiconductor

HM62256A Series
Low V
This characteristics is guaranteed only for L/L-SL version.
Parameter
———————————————————————————————————————————————–
V
———————————————————————————————————————————————–
Data retention current
———————————————————————————————————————————————–
Chip deselect to data retention time t
——————————————————————————————————––
Operation recovery time
———————————————————————————————————————————————–
Low V
CC
V
Notes: 1
CS
CC
4.5 V
2.2 V
0 V
for data retention
V
DR
CC
CC
Data Retention Characteristics (Ta = 0 to +70°C)
Data Retention Timing Waveform
2. 20 µA max at Ta = 0 to +40°C. (only for L-version)
3. 3 µA max at Ta = 0 to +40°C. (only for L-SL version)
4. t
5. CS controls address buffer, WE buffer, OE buffer, and Din buffer. If CS controls data
Typical values are at V
retention mode, Vin levels (address, WE, OE, I/O) can be in the high impedance state.
RC
= read cycle time.
t
CDR
Symbol Min
V
I
t
CC
CCDR
CDR
R
DR
= 3.0 V, Ta = +25°C and not guaranteed.
——————————————–
2
—
—
0
t
RC
Data retention mode
CS
*4
V
Typ
—
0.2
0.2
—
—
CC
– 0.2 V
*1
Max
—
30
10
—
—
*2
*3
Unit
V
µA
µA
ns
ns
Test conditions
CS ≥ V
V
CS ≥ V
See retention waveform
HM62256A Series
CC
= 3.0 V, Vin ≥ 0 V
CC
CC
t
R
– 0.2 V, Vin ≥ 0 V
– 0.2 V
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