TIP31CF

Manufacturer Part NumberTIP31CF
DescriptionTRIPLE DIFFUSED NPN TRANSISTOR(GENERAL PURPOSE)
ManufacturerKEC(Korea Electronics)
TIP31CF datasheet
 


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SEMICONDUCTOR
GENERAL PURPOSE APPLICATION.
FEATURES
・Complementary to TIP32CF.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
DC
Collector Current
Pulse
Base Current
Ta=25℃
Collector Power
Dissipation
Tc=25℃
Junction Temperature
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
Collector Emitter Sustaining Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Transition Frequency
2002. 6. 14
Revision No : 0
TECHNICAL DATA
SYMBOL
RATING
UNIT
V
100
V
CBO
V
100
V
CEO
V
5
V
EBO
I
3
C
A
I
5
CP
I
1
A
B
2
W
P
C
25
W
T
150
j
T
-55~150
stg
SYMBOL
TEST CONDITION
V
I
=30mA, I
=0
CEO(SUS)
C
B
I
V
=60V, I
=0
CEO
CE
B
I
V
=100V, V
=0
CES
CE
EB
I
V
=5V, I
=0
EBO
BE
C
V
=4V, I
=1A
CE
C
h
FE
V
=4V, I
=3A
CE
C
V
I
=3A, I
=375mA
CE(sat)
C
B
V
V
=4V, I
=3A
BE(on)
CE
C
f
V
=10V, I
=500mA f=1MHz
T
CE
C
TIP31CF
TRIPLE DIFFUSED NPN TRANSISTOR
A
C
DIM
U
A
B
E
C
S
D
E
Φ3.20±0.20
F
G
H
T
R
L
L
J
K
L
M
M
V
N
D
D
O
P
Q
N
N
R
H
S
T
T
T
U
V
3
1
2
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
MIN.
TYP.
MAX.
100
-
-
-
-
0.3
-
-
200
-
-
1
25
-
-
10
-
50
-
-
1.2
-
-
1.8
3.0
-
-
MILLIMETERS
10.30 MAX
15.30 MAX
2.70±0.30
0.85 MAX
3.00±0.30
12.30 MAX
0.75 MAX
13.60±0.50
3.90 MAX
1.20
1.30
2.54
4.50±0.20
6.80
2.60±0.20
10°
25°
0.5
2.60±0.15
UNIT
V
mA
μ A
mA
V
V
MHz
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TIP31CF Summary of contents

  • Page 1

    ... I = =4V =3A, I =375mA CE(sat =4V, I =3A BE(on =10V, I =500mA f=1MHz TIP31CF TRIPLE DIFFUSED NPN TRANSISTOR A C DIM Φ3.20±0. ...

  • Page 2

    ... COLLECTOR CURRENT 100 AMBIENT TEMPERATURE 2002 Revision TIP31CF C V =-4V CE (mA) C 150 200 CE(sat) BE(sat) -10k -5k -3k -1k V BE(sat) -500 -300 -100 -50 V CE(sat) -30 -10 ...