AM29F032B Advanced Micro Devices, AM29F032B Datasheet

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AM29F032B

Manufacturer Part Number
AM29F032B
Description
32 Megabit (4 M x 8-Bit) CMOS 5.0 Volt-only/ Uniform Sector Flash Memory
Manufacturer
Advanced Micro Devices
Datasheets

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Am29F032B
Data Sheet
Continuity of Specifications
Continuity of Ordering Part Numbers
For More Information
Publication Number 21610 Revision D Amendment +1 Issue Date December 5, 2000

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AM29F032B Summary of contents

Page 1

... Am29F032B Data Sheet Continuity of Specifications Continuity of Ordering Part Numbers For More Information Publication Number 21610 Revision D Amendment +1 Issue Date December 5, 2000 ...

Page 2

... Am29F032B 32 Megabit ( 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements Manufactured on 0.32 µm process technology High performance — Access times as fast Low power consumption — typical active read current — ...

Page 3

... GENERAL DESCRIPTION The Am29F032B Mbit, 5.0 volt-only Flash memory organized as 4,194,304 bytes of 8 bits each. The 4 Mbytes of data are divided into 64 sectors of 64 Kbytes each for flexible erase capability. The 8 bits of data appear on DQ0–DQ7. The Am29F032B is offered in 40-pin TSOP and 44-pin SO packages. The Am29F032B is manufactured using AMD’ ...

Page 4

... Product Selector Guide . . . . . . . . . . . . . . . . . . . . . 4 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Connection Diagrams . . . . . . . . . . . . . . . . . . . . . . 5 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Logic Symbol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . 7 Device Bus Operations . . . . . . . . . . . . . . . . . . . . . 8 Table 1. Am29F032B Device Bus Operations .................................. 8 Requirements for Reading Array Data ..................................... 8 Writing Commands/Command Sequences .............................. 8 Program and Erase Operation Status ...................................... 9 Standby Mode .......................................................................... 9 RESET#: Hardware Reset Pin ................................................. 9 Output Disable Mode................................................................ 9 Table 2 ...

Page 5

... Detector CC A0–A21 4 5% -75 10 Sector Switches Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Y-Decoder STB Timer X-Decoder Am29F032B Am29F032B -90 -120 -150 90 120 150 90 120 150 – DQ0 DQ7 Input/Output Buffers Data STB Latch Y-Gating Cell Matrix ...

Page 6

... DQ0 DQ1 DQ2 DQ3 V V 40-Pin Standard TSOP 40-Pin Reverse TSOP Am29F032B 40 A20 39 A21 38 WE# 37 OE# 36 RY/BY# 35 DQ7 34 DQ6 33 DQ5 32 DQ4 DQ3 27 DQ2 26 DQ1 ...

Page 7

... Output Enable RESET# = Hardware Reset Pin, Active Low RY/BY# = Ready/Busy Output V = +5.0 V single power supply CC (see Product Selector Guide for device speed ratings and voltage supply tolerances) = Device Ground Pin Not Connected Internally 6 LOGIC SYMBOL 22 A0–A21 CE# OE# WE# RESET# Am29F032B 8 DQ0–DQ7 RY/BY# ...

Page 8

... Megabit ( 8-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory 5.0 V Read, Program, and Erase Valid Combinations AM29F032B-75 EC, EI, FC, FI, SC, SI AM29F032B-90 EC, EI, EE, FC, FI, FE, AM29F032B-120 SC, SI, SE AM29F032B-150 = Commercial ( + Industrial (– + Extended (– +125 C) = 40-Pin Thin Small Outline Package (TSOP) Standard Pinout (TS 040) ...

Page 9

... The register is composed of latches that store the commands, along with the address and data informa- tion needed to execute the command. The contents of Table 1. Am29F032B Device Bus Operations Operation Read Write CMOS Standby ...

Page 10

... Output Disable Mode When the OE# input represents the CC3 disabled. The output pins are placed in the high imped- ance state. Am29F032B , the device enters IL (during Embedded Algorithms). The sys- (not during Embedded Algo- READY after the RE- RH ...

Page 11

... Table 2. Am29F032B Sector Address Table Sector A21 A20 SA0 0 0 SA1 0 0 SA2 0 0 SA3 0 0 SA4 0 0 SA5 0 0 SA6 0 0 SA7 0 0 SA8 0 0 SA9 0 0 SA10 0 0 SA11 0 0 SA12 0 0 SA13 0 0 SA14 0 0 SA15 0 0 SA16 ...

Page 12

... Table 2. Am29F032B Sector Address Table (Continued) Sector A21 A20 SA44 1 0 SA45 1 0 SA46 1 0 SA47 1 0 SA48 1 1 SA49 1 1 SA50 1 1 SA51 1 1 SA52 1 1 SA53 1 1 SA54 1 1 SA55 1 1 SA56 1 1 SA57 1 1 SA58 1 1 SA59 1 1 SA60 ...

Page 13

... SA32–SA35 1 SA36–SA39 0 SA40–SA43 1 SA44–SA47 0 SA48–SA51 1 SA52–SA55 0 SA56–SA59 1 SA60–SA63 Am29F032B (11.5 V – 12.5 V). Dur removed from the RESET# ID START RESET (Note 1) Perform Erase or Program Operations RESET Temporary Sector Group Unprotect Completed (Note 2) Operation ...

Page 14

... Once in the autoselect mode, the reset command must be written to return to reading array data (also applies to autoselect during Erase Suspend). If DQ5 goes high during a program or erase operation, writing the reset command returns the device to read- ing array data (also applies during Erase Suspend). Am29F032B is above LKO or WE ...

Page 15

... Figure 3 illustrates the algorithm for the erase opera- tion. See the Erase/Program Operations tables in “AC Characteristics” for parameters, and to the Chip/Sector Erase Operation Timings for timing waveforms. Am29F032B ...

Page 16

... Erase Sus- pend command. When the Erase Suspend command is written during a sector erase operation, the device requires a maximum of 20 µs to suspend the erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the device immediately ter- Am29F032B 15 ...

Page 17

... Write Erase Command Sequence Data Poll from System No Data = FFh? Yes Erasure Completed Notes: 1. See the appropriate Command Definitions table for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 3. Erase Operation Am29F032B Embedded Erase algorithm in progress ...

Page 18

... Command Definitions Table 5. Am29F032B Command Definitions Command Sequence (Note 1) Read (Note 5) 1 Reset (Note 6) 1 Manufacturer ID 4 Autoselect Device ID 4 (Note 7) Sector Group Protect 4 Verify (Note 8) Program 4 Chip Erase 6 Sector Erase 6 Erase Suspend (Note 9) 1 Erase Resume (Note 10) 1 Legend Don’t care RA = Address of the memory location to be read ...

Page 19

... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 4. Data# Polling Algorithm Am29F032B Yes Yes PASS ...

Page 20

... DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation still toggling, the device did not complete the operation successfully, and Am29F032B 19 ...

Page 21

... Complete, Write Reset Command Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text. Figure 5. Toggle Bit Algorithm Am29F032B (Note 1) No (Notes Program/Erase Operation Complete ...

Page 22

... See “DQ5: Exceeded Timing Limits” for more information. Table 6. Write Operation Status DQ7 DQ5 (Note 1) DQ6 (Note 2) DQ7# Toggle 0 0 Toggle toggle 0 Data Data Data DQ7# Toggle 0 Am29F032B DQ2 DQ3 (Note 1) RY/BY# N/A No toggle 0 1 Toggle 0 N/A Toggle 1 Data Data 1 N/A N ...

Page 23

... V to +5. Operating ranges define those limits between which the functionality of the device is guaranteed. 22 +0.8 V –0.5 V –2.0 V Figure 6. Maximum Negative 0.5 V. During +0.5 V 2.0 V Figure 7. Maximum Positive Am29F032B Overshoot Waveform Overshoot Waveform ...

Page 24

... IL RESET 0 RESET Min –2.5 mA Min –100 µ Min Am29F032B Min Typ Max Unit 1.0 µA 50 µA 1.0 µ 0.4 1.0 mA 0.4 1.0 mA –0.5 0 11.5 12.5 V 0. ...

Page 25

... Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Am29F032B -75 All others Unit 1 TTL gate L 30 100 0.0– ...

Page 26

... Max Read Min Toggle and Min Data# Polling Max Max Min Max t RC Addresses Stable t ACC OEH t CE HIGH Z Figure 9. Read Operation Timings Am29F032B Speed Options -75 -90 -120 -150 70 90 120 150 70 90 120 150 70 90 120 150 ...

Page 27

... CE#, OE# RESET# RY/BY# CE#, OE# RESET# 26 Test Setup Max Max Min Min Min Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 10. RESET# Timings Am29F032B All Speed Options Unit 20 µs 500 ns 500 ...

Page 28

... See the “Erase And Programming Performance” section for more information. Parameter Description Min Min Min Min Min Min Min Min Min Min Typ Typ Max Min Min Am29F032B Speed Options -75 -90 -120 -150 Unit 70 90 120 150 ...

Page 29

... VCS V CC Note program address program data WPH A0h t BUSY is the true data at the program address. OUT Figure 11. Program Operation Timings Am29F032B Read Status Data (last two cycles WHWH1 Status D OUT t RB ...

Page 30

... RY/BY# t VCS V CC Note Sector Address Valid Address for reading status data. Figure 12. Chip/Sector Erase Operation Timings 555h for chip erase WPH 55h 30h 10 for Chip Erase Am29F032B WHWH2 In Complete Progress t t BUSY RB 29 ...

Page 31

... Figure 14. Toggle Bit Timings (During Embedded Algorithms Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29F032B VA High Z True Valid Data High Z True Valid Data VA VA Valid Status Valid Data (stops toggling) ...

Page 32

... Figure 16. Temporary Sector Group Unprotect Timings Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 15. DQ2 vs. DQ6 Min Min Program or Erase Command Sequence t RSP Am29F032B Erase Resume Erase Erase Complete Read All Speed Options 500 VIDR Unit ns µ ...

Page 33

... Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. 32 Parameter Description Min Min Min Min Min Min Min Min Min Min Typ Typ Max Am29F032B Speed Options -75 -90 -120 -150 70 90 120 150 ...

Page 34

... Figure 17. Alternate CE# Controlled Write Operation Timings PA for program SA for sector erase 555 for chip erase Data# Polling GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29F032B PA DQ7# D OUT = Array Data. OUT 33 ...

Page 35

... V, 1,000,000 cycles (4.75 V for -75 5.0 Volt, one pin at a time. CC Test Conditions OUT Test Conditions 150 C 125 C Am29F032B Unit Comments sec Excludes 00h programming prior to erasure (Note 4) sec µs Excludes system-level overhead (Note 5) sec , 1,000,000 cycles. Additionally, CC Min Max –1 ...

Page 36

... PHYSICAL DIMENSIONS SO 044–44-Pin Small Outline Package Am29F032B Dwg rev AC; 10/99 35 ...

Page 37

... PHYSICAL DIMENSIONS TS 040–40-Pin Standard Thin Small Outline Package 36 Am29F032B Dwg rev AA; 10/99 ...

Page 38

... PHYSICAL DIMENSIONS TSR040–40-Pin Reversed Thin Small Outline Package Am29F032B Dwg rev AA; 10/99 37 ...

Page 39

... Added table. Revision D (November 17, 1999) AC Characteristics—Figure 11. Program Operations Timing and Figure 12. Chip/Sector Erase Operations Deleted t and changed OE# waveform to start at GHWL high. Physical Dimensions Replaced figures with more detailed illustrations. Revision D+1 (December 5, 2000) Added table of contents. Ordering Information Deleted burn-in option. Am29F032B ...

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