M368L3223ETN Samsung, M368L3223ETN Datasheet

no-image

M368L3223ETN

Manufacturer Part Number
M368L3223ETN
Description
DDR SDRAM Unbuffered Module
Manufacturer
Samsung
Datasheet
256MB, 512MB Unbuffered DIMM
DDR SDRAM
DDR SDRAM Unbuffered Module
184pin Unbuffered Module based on 256Mb E-die
with 64/72-bit ECC/Non ECC
Revision 1.1
August. 2003
Rev. 1.1 August. 2003

Related parts for M368L3223ETN

M368L3223ETN Summary of contents

Page 1

... Unbuffered DIMM DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 256Mb E-die with 64/72-bit ECC/Non ECC Revision 1.1 August. 2003 DDR SDRAM Rev. 1.1 August. 2003 ...

Page 2

Unbuffered DIMM Revision History Revision 1.0 (April, 2003) - First release Revision 1.1 (August, 2003) - Corrected typo. DDR SDRAM Rev. 1.1 August. 2003 ...

Page 3

... Unbuffered DIMM 184Pin Unbuffered DIMM based on 256Mb E-die (x8,) Ordering Information Part Number M368L3223ETN-C(L)B3/AA/A2/B0 M381L3223ETM-C(L)B3/AA/A2/B0 M368L6423ETN-C(L)B3/AA/A2/B0 M381L6423ETM-C(L)B3/AA/A2/B0 Operating Frequencies B3(DDR333@CL=2.5) Speed @CL2 133MHz Speed @CL2.5 166MHz CL-tRCD-tRP 2.5-3-3 Feature • Power supply : Vdd: 2.5V ± 0.2V, Vddq: 2.5V ± 0.2V • Double-data-rate architecture; two data transfers per clock cycle • ...

Page 4

... These pins are not used in this module. 2. Pins 44, 45, 47, 49, 51, 134, 135, 140, 142, 144 are used on x72(M381 ~ ) module, and are not used on x64(M368 ~ ) module. 3. Pins 111, 158 are NC for 1row modules [ M368(81)L3223ETN(M)] & used for 2row modules [M368(81)L6423ETN( ...

Page 5

... Unbuffered DIMM 256MB, 32M x 64 Non ECC Module (M368L3223ETN) Functional Block Diagram CS0 DQS0 DM0 DM/ CS DQS DQ0 I/O 7 DQ1 D0 I/O 6 DQ2 I/O 1 DQ3 I/O 0 DQ4 I/O 5 DQ5 I/O 4 DQ6 I/O 3 DQ7 I/O 2 DQS1 DM1 DM/ CS DQS DQ8 I/O 7 DQ9 I DQ10 I/O 1 DQ11 I/O 0 DQ12 I/O 5 DQ13 I/O 4 DQ14 I/O 3 DQ15 ...

Page 6

... BA0-BA1 : DDR SDRAMs A12 A0-A12 : DDR SDRAMs RAS RAS : DDR SDRAMs CAS CAS : DDR SDRAMs CKE0 CKE : DDR SDRAMs DDR SDRAMs (Populated as 1 bank of x8 DDR SDRAM Module) DQS4 DM4 DM/ CS DQS DQ32 I/O 7 DQ33 D4 I/O 6 DQ34 ...

Page 7

... BA0-BA1 : DDR SDRAMs D0 - D15 A0 - A12 A0-A12: DDR SDRAMs D0 - D15 RAS RAS : DDR SDRAMs D0 - D15 CAS CAS : DDR SDRAMs D0 - D15 CKE 0/1 CKE : DDR SDRAMs D0 - D15 DDR SDRAMs D0 - D15 (Populated as 2 bank of x8 DDR SDRAM Module) DQS4 DM4 DM/ CS DQS DM/ DQ32 I/O 0 I/O 7 DQ33 I/O 1 ...

Page 8

... BA0-BA1 : DDR SDRAMs D0 - D17 A0 - A12 A0-A12 : DDR SDRAMs D0 - D17 RAS RAS : DDR SDRAMs D0 - D17 CAS CAS : DDR SDRAMs D0 - D17 CKE0/1 CKE : DDR SDRAMs D0 - D17 DDR SDRAMs D0 - D17 (Populated as 2 bank of x8 DDR SDRAM Module) DQS4 DM4 DM/ CS DQS DM/ DQ32 I/O 0 I/O 7 DQ33 I/O 1 ...

Page 9

Unbuffered DIMM Absolute Maximum Ratings Parameter Voltage on any pin relative to V Voltage on V & V supply relative DDQ Storage temperature Power dissipation Short circuit current Note : Permanent device damage may occur ...

Page 10

... Unbuffered DIMM DDR SDRAM IDD spec table M368L3223ETN [ (32M 256MB Non ECC Module ] Symbol B3(DDR333@CL=2.5) AA(DDR266@CL=2) A2(DDR266@CL=2) B0(DDR266@CL=2.5) IDD0 720 IDD1 920 IDD2P 24 IDD2F 200 IDD2Q 160 IDD3P 280 IDD3N 440 IDD4R 1,280 IDD4W 1,280 IDD5 1,360 IDD6 ...

Page 11

... IDD4R 1,940 IDD4W 1,940 IDD5 2,030 IDD6 Normal 54 Low power 27 IDD7A 3,020 * Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap. 1,160 1,000 1,360 1,200 48 48 320 320 290 290 480 480 720 ...

Page 12

... VID(AC) 0.7 VIX(AC) 0.5*VDDQ-0.2 of the transmitting device and must track variations in the DC level of the same. DDQ V =0.5*V tt DDQ R =50Ω T Z0=50Ω V REF =0.5*V C =30pF LOAD Output Load Circuit (SSTL_2) M368L3223ETN Symbol Min CIN1 49 CIN2 42 CIN3 42 CIN4 25 CIN5 6 Cout1 6 Cout2 - M368L6423ETN Symbol Min CIN1 ...

Page 13

Unbuffered DIMM AC Timming Parameters & Specifications Parameter Row cycle time Refresh row cycle time Row active time RAS to CAS delay Row precharge time Row active to Row active delay Write recovery time Last data in to ...

Page 14

Unbuffered DIMM Parameter Symbol Mode register set cycle time DQ & DM setup time to DQS DQ & DM hold time to DQS Control & Address input pulse width DQ & DM input pulse width Power down exit ...

Page 15

Unbuffered DIMM Table 4 : Input/Output Setup & Hold Derating for Rise/Fall Delta Slew Rate Delta Slew Rate tDS +/- 0.0 V/ns 0 +/- 0.25 V/ns +50 +/- 0.5 V/ns +100 Table 5 : Output Slew Rate Characteristice ...

Page 16

Unbuffered DIMM Component Notes 1. tHZ and tLZ transitions occur in the same access time windows as valid data transitions. these parameters are not referenced to a specific voltage level but specify when the device output in no ...

Page 17

Unbuffered DIMM System Notes : a. Pullup slew rate is characteristized under the test conditions as shown in Figure 1. Output Figure 1 : Pullup slew rate test load b. Pulldown slew rate is measured under the test ...

Page 18

Unbuffered DIMM Command Truth Table COMMAND Register Extended MRS Register Mode Register Set Auto Refresh Entry Refresh Self Refresh Bank Active & Row Addr. Read & Auto Precharge Disable Column Address Auto Precharge Enable Write & Auto Precharge ...

Page 19

... Unbuffered DIMM Physical Dimensions : 32Mx64 (M368L3223ETN) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 0.26 (6.62) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No : K4H560838E-T*** 5.25 ± 0.006 (133.350 ± 0.15) 5.077 (128.950) A 2.55 (64.77) (49.53) 0.157 (4.00) 0.1496 (3.80) 0.071 (1 ...

Page 20

Unbuffered DIMM Physical Dimensions : 32Mx72 (M381L3223ETM) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 0.26 (6.62) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No ...

Page 21

Unbuffered DIMM Physical Dimensions : 64Mx64 (M368L6423ETN) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 0.26 (6.62) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No ...

Page 22

Unbuffered DIMM Physical Dimensions : 64Mx72 (M381L6423ETM) 1.25 ± 0.006 (31.75 ±0.15) 0.250 (6.350) 0.26 (6.62) 2.175 Detail A Tolerances : ± 0.005(.13) unless otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOPII. DDR SDRAM Part No ...

Related keywords