K6T0808C1D-B Samsung semiconductor, K6T0808C1D-B Datasheet - Page 4

• Manufacturer Part Number: K6T0808C1D-B
• Description: 32Kx8 bit Low Power CMOS Static RAM
• Manufacturer: Samsung semiconductor

DC AND OPERATING CHARACTERISTICS
CAPACITANCE
1. Capacitance is sampled not, 100% tested
RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Commercial Product : T
2. Overshoot : V
3. Undershoot : -3.0V in case of pulse width 30ns
4. Overshoot and undershoot are sampled, not 100% tested
K6T0808C1D Family
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current (CMOS)
Input capacitance
Input/Output capacitance
Supply voltage
Ground
Input high voltage
Input low voltage
Industrial Product : T
Item
CC
+3.0V in case of pulse width 30ns
Item
Item
A
=-40 to 85 C, otherwise specified
1)
A
=0 to 70 C, otherwise specified
(f=1MHz, T
Symbol
V
I
I
V
I
I
I
CC1
CC2
I
SB1
I
CC
LO
SB
A
LI
OL
OH
=25 C)
Symbol
V
CS=V
Cycle time=1 s, 100% duty, I
CS 0.2V, V
Cycle time=Min,100% duty, I
I
I
CS=V
CS Vcc-0.2V, Other inputs=0~Vcc
I
OL
OH
C
C
IO
IN
Symbol
IO
IN
=2.1mA
=Vss to Vcc
=0mA, CS=V
=-1.0mA
Vcc
Vss
V
V
IH
IH
IH
IL
, Other inputs=V
or OE=V
IN
0.2V, V
IL,
IH
Test Condition
V
or WE=V
IN
Test Conditions
=V
IN
V
V
-0.5
Min
4.5
2.2
IN
IO
IH
0
IH
Vcc -0.2V
=0V
=0V
or V
3)
1)
or V
IL
IO
IO
, V
IL
IL
=0mA, CS=V
=0mA
IO
, Read
=V
SS
to Vcc
Typ
5.0
0
-
-
Low Power
Low Low Power
IL,
V
Min
IN
-
-
=V
IH
Read
Write
or V
Vcc+0.5V
IL
Max
5.5
0.8
0
CMOS SRAM
Min
Max
2.4
-1
-1
10
-
-
-
-
-
-
-
8
2)
Typ
0.2
45
5
2
1
-
-
-
-
-
-
November 1997
Revision 1.0
Max
0.4
10
20
60
30
Unit
1
1
5
1
5
-
Unit
V
V
V
V
pF
pF
Unit
mA
mA
mA
mA
V
V
A
A
A
A