K6X4016C3F-B

Manufacturer Part NumberK6X4016C3F-B
Description256Kx16 bit Low Power full CMOS Static RAM
ManufacturerSamsung semiconductor
K6X4016C3F-B datasheet
 


1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
Page 2/9

Download datasheet (132Kb)Embed
PrevNext
K6X4016C3F Family
256Kx16 bit Low Power full CMOS Static RAM
FEATURES
Process Technology: Full CMOS
Organization: 256Kx16
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL compatible
Package Type: 44-TSOP2-400F
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
Commercial(
C)
K6X4016C3F-B
0~70
C)
K6X4016C3F-F
Industrial (-40~85
K6X4016C3F-Q
C)
Automotive (-40~125
1. The parameter is measured with 50pF test load.
PIN DESCRIPTION
A4
44
1
A3
2
43
A2
42
3
A1
4
41
A0
5
40
CS
6
39
I/O1
7
38
I/O2
8
37
I/O3
9
36
I/O4
10
35
44-TSOP2
Vcc
11
34
Vss
12
33
Forward
13
I/O5
32
I/O6
14
31
I/O7
15
30
I/O8
16
29
WE
17
28
18
A17
27
A16
19
26
20
A15
25
21
A14
24
A13
22
23
Name
Function
Name
CS
Chip Select Input
LB
OE
Output Enable Input
UB
WE
Write Enable Input
Vcc
A
~A
Address Inputs
Vss
0
17
I/O
~I/O
Data Inputs/Outputs
NC
1
16
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
GENERAL DESCRIPTION
The K6X4016C3F families are fabricated by SAMSUNG s
advanced full CMOS process technology. The families sup-
port various operating temperature range and small pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
Power Dissipation
Speed
Standby
(I
, Max)
SB1
A
20
1)
4.5~5.5V
55
/70ns
A
30
FUNCTIONAL BLOCK DIAGRAM
A5
A6
A7
OE
UB
LB
I/O16
I/O15
I/O14
Row
I/O13
Addresses
Vss
Vcc
I/O12
I/O11
I/O10
I/O9
N.C
A8
I/O
~I/O
1
8
A9
A10
A11
I/O
~I/O
9
16
A12
Function
Lower Byte (I/O
)
1~8
Upper Byte(I/O
)
9~16
Power
WE
Ground
OE
Control
logic
UB
No Connection
LB
CS
2
CMOS SRAM
PKG Type
Operating
(I
, Max)
CC2
30 mA
44-TSOP2-400F
Clk gen.
Precharge circuit.
Vcc
Vss
Row
Memory array
select
Data
I/O Circuit
cont
Column select
Data
cont
Data
cont
Column Addresses
Revision 1.0
September 2003