K6X4016C3F-B Samsung semiconductor, K6X4016C3F-B Datasheet - Page 4

• Manufacturer Part Number: K6X4016C3F-B
• Description: 256Kx16 bit Low Power full CMOS Static RAM
• Manufacturer: Samsung semiconductor

CAPACITANCE
1. Capacitance is sampled, not 100% tested
DC AND OPERATING CHARACTERISTICS
RECOMMENDED DC OPERATING CONDITIONS
Note:
1. Commercial Product: T
2. Overshoot: V
3. Undershoot: -3.0V in case of pulse width
4. Overshoot and undershoot are sampled, not 100% tested
K6X4016C3F Family
Input leakage current
Output leakage current
Operating power supply current
Average operating current
Output low voltage
Output high voltage
Standby Current(TTL)
Standby Current(CMOS)
Automotive Product T
Industrial Product: T
Input capacitance
Input/Output capacitance
Supply voltage
Ground
Input high voltage
Input low voltage
CC
Item
+3.0V in case of pulse width
Item
Item
A
A
=-40 to 85 C, otherwise specified
=-40 to 125 C, otherwise specified
1)
A
=0 to 70 C, otherwise specified
(f=1MHz, T
Symbol
A
I
I
V
I
V
I
I
I
CC1
CC2
SB1
=25 C)
I
CC
LO
SB
OH
LI
OL
30ns
Symbol
30ns
V
CS=V
I
Cycle time=1 s, 100% duty, I
CS 0.2V, V
Cycle time=Min, 100% duty, I
V
I
I
CS=V
CS Vcc-0.2V, Other inputs=0~Vcc
C
C
IO
OL
OH
Symbol
IN
IN
IN
IO
=0mA, CS=V
=2.1mA
=Vss to Vcc
=V
=-1.0mA
Vcc
Vss
V
V
IH
IL
IH
IH
IH
, Other inputs = V
or V
or OE=V
IN
IL
0.2V or V
IL
IH
, V
Test Condition
or WE=V
IN
Test Conditions
-0.5
V
V
=V
4
Min
4.5
2.2
IN
IO
0
IN
IL
=0V
=0V
IL
3)
1)
or V
Vcc-0.2V
or V
IL
IO
IO
, V
IH
=0mA
=0mA, CS=V
IH
, Read
IO
=Vss to Vcc
Typ
K6X4016C3F-Q
5.0
K6X4016C3F-B
K6X4016C3F-F
0
-
-
IL,
Min
-
-
Vcc+0.5
Max
5.5
0.8
0
Min
2.4
CMOS SRAM
-1
-1
Max
-
-
-
-
-
-
-
-
10
8
2)
Typ
-
-
-
-
-
-
-
-
-
-
-
September 2003
Max
Revision 1.0
0.4
0.4
30
20
30
1
1
5
7
-
Unit
Unit
V
V
V
V
pF
pF
Unit
mA
mA
mA
mA
V
V
A
A
A
A