K6X4016T3F-B

Manufacturer Part NumberK6X4016T3F-B
Description256Kx16 bit Low Power and Low Voltage CMOS Static RAM
ManufacturerSamsung semiconductor
K6X4016T3F-B datasheet
 


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K6X4016T3F Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
Revision History
Revision No
History
0.0
Initial draft
0.1
Revised
- Added Commercial product
- Deleted
44-TSOP2-400R Package Type.
- Added 55ns product(@ 3.0V~3.6V)
1.0
Finalized
Revised
- Changed I
(Operating power supply current) from 4mA to 2mA
CC
- Changed I
1(Average operating current) from 4mA to 3mA
CC
- Changed I
2(Average operating current) from 40mA to 25mA
CC
- Changed I
1(Standby Current(CMOS), Commercial)
SB
from 15 A to 10 A
- Changed I
1(Standby Current(CMOS), Industrial)
SB
from 20 A to 10 A
- Changed I
1(Standby Current(CMOS), Automotive)
SB
from 30 A to 20 A
- Changed I
(Data retention current, Commercial)
DR
from 15 A to 10 A
- Changed I
(Data retention current, Industrial)
DR
from 20 A to 10 A
- Changed I
(Data retention current, Automotive)
DR
from 30 A to 20 A
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and
products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
CMOS SRAM
Draft Date
July 29, 2002
December 2, 2002
August 8, 2003
1
Remark
Preliminary
Preliminary
Final
Revision 1.0
August 2003

K6X4016T3F-B Summary of contents

  • Page 1

    ... K6X4016T3F Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No History 0.0 Initial draft 0.1 Revised - Added Commercial product - Deleted 44-TSOP2-400R Package Type. - Added 55ns product(@ 3.0V~3.6V) 1.0 Finalized Revised - Changed I (Operating power supply current) from 4mA to 2mA ...

  • Page 2

    ... Power Supply Voltage: 2.7~3.6V Low Data Retention Voltage: 2V(Min) Three State Outputs Package Type: 44-TSOP2-400F PRODUCT FAMILY Product Family Operating Temperature Vcc Range K6X4016T3F-B Commercial(0~70 C) K6X4016T3F-F Industrial(-40~85 C) K6X4016T3F-Q Automotive(-40~125 C) 1. This parameter is measured with 30pF test load (Vcc=3.0~3.6V). 2. The parameter is measured with 30pF test load. ...

  • Page 3

    ... Power Deselected Standby Output Disabled Active Output Disabled Active Lower Byte Read Active Upper Byte Read Active Word Read Active Lower Byte Write Active Upper Byte Write Active Word Write Active Unit Remark K6X4016T3F-B C K6X4016T3F-F K6X4016T3F-Q Revision 1.0 August 2003 ...

  • Page 4

    ... CS 0.2V 0. Vcc-0. Cycle time=Min , 100% duty, I =0mA, CS =2.1mA OL I =-1.0mA OH CS=V , Other inputs K6X4016T3F-B CS Vcc-0.2V, Other K6X4016T3F-F inputs=0~Vcc K6X4016T3F-Q 4 CMOS SRAM Typ Max Unit 3.6 V 3.0/3 Vcc+0.2 - 0.6 V Min Max Unit - ...

  • Page 5

    ... WHZ Test Condition CS Vcc-0.2V K6X4016T3F-B Vcc=3.0V, CS Vcc-0.2V K6X4016T3F-F K6X4016T3F-Q See data retention waveform 5 CMOS SRAM =-40 to 125 Units 70ns 85ns Max Min Max - ...

  • Page 6

    ... K6X4016T3F Family TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) Address Data Out Previous Data Valid TIMING WAVEFORM OF READ CYCLE(2) Address CS UB Data out High-Z NOTES (READ CYCLE and are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage ...

  • Page 7

    ... K6X4016T3F Family TIMING WAVEFORM OF WRITE CYCLE(1) Address CS UB Data in High-Z Data Undefined Data out TIMING WAVEFORM OF WRITE CYCLE(2) Address CS UB Data in Data out High-Z (WE Controlled CW( WP(1) t AS( Data Valid t WHZ (CS Controlled AS(3) CW( WP( ...

  • Page 8

    ... K6X4016T3F Family TIMING WAVEFORM OF WRITE CYCLE(3) Address CS UB Data in High-Z Data out NOTES (WRITE CYCLE wri e occurs during the overlap low CS and low WE. A write begins when CS goes low and WE goes low with asserting for single byte operation or simultaneously asserting UB and LB for double byte operation. A write ends at the earliest transi- tion when CS goes high and WE goes high ...

  • Page 9

    ... K6X4016T3F Family PACKAGE DIMENSIONS 44 PIN THIN SMALL OUTLINE PACKAGE TYPE II (400F) #44 #1 18.81 MAX. 0.741 18.41 0.10 0.725 0.004 0.35 0.805 0. 0.032 0.014 0.004 #23 11.76 0.20 0.463 0.008 #22 1.00 0.10 0.039 0.004 1.20 MAX. 0.047 0.10 MAX 0.004 0.80 0.0315 9 CMOS SRAM Unit: millimeter(inch) 0~8 0. 0.010 0.45 ~0.75 0.018 ~ 0.030 0. 0.020 Revision 1.0 August 2003 ...