IRAMS10UP60B_05 IRF [International Rectifier], IRAMS10UP60B_05 Datasheet
IRAMS10UP60B_05
Related parts for IRAMS10UP60B_05
IRAMS10UP60B_05 Summary of contents
Page 1
Absolute Maximum Ratings Parameter IGBT/Diode Blocking Voltage CES RRM + Positive Bus Input Voltage =25°C RMS Phase Current (Note =100°C RMS Phase Current (Note ...
Page 2
IRAMS10UP60B Internal Electrical Schematic - IRAMS10UP60B V (10 (12) VB1 (7) U, VS1 (8) VB2 (4) V, VS2 (5) VB3 (1) W, VS3 (2) HIN1 (15) HIN2 (16) HIN3 (17) LIN1 (18) LIN2 (19) LIN3 (20) FLT-EN(21) ...
Page 3
Absolute Maximum Ratings (Continued) Symbol Parameter Bootstrap Diode Peak Forward I BDF Current Bootstrap Resistor Peak Power P BR Peak (Single Pulse) High side floating supply offset V S1,2,3 voltage V High side floating supply voltage B1,2,3 Low Side and ...
Page 4
IRAMS10UP60B Inverter Section Switching Characteristics @ T Symbol Parameter E Turn-On Switching Loss ON E Turn-Off Switching Loss OFF E Total Switching Loss TOT E Diode Reverse Recovery energy REC t Diode Reverse Recovery time RR E Turn-On Switching Loss ...
Page 5
Static Electrical Characteristics Driver Function )=15V, unless otherwise specified. The V BIAS CC BS1,2,3 applicable to all six channels. (Note 3) Symbol Definition Logic "0" input voltage INH ENH Logic ...
Page 6
IRAMS10UP60B Thermal and Mechanical Characteristics Symbol Parameter R Thermal resistance, per IGBT th(J-C) R Thermal resistance, per Diode th(J-C) R Thermal resistance, C-S th(C-S) C Creepage Distance D Internal Current Sensing Resistor - Shunt Characteristics Symbol Parameter R Resistance Shunt ...
Page 7
HIN1,2,3 LIN1,2 BUS_trip I BUS U,V,W Sequence of events: 1-2) Current begins to rise 2) Current reaches I level BUS_Trip 2-3) Current is higher than I BUS_Trip over-current. In case of high current (short circuit), the actual delay ...
Page 8
IRAMS10UP60B Module Pin-Out Description Pin Name W V ...
Page 9
Typical Application Connection IRAMS10UP60B DC BUS CAPACITORS +5V PGND +15V +5V 0.1mF 47kohm DGND Temp Monitor CONTROLLER Fault 1K DGND 1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to reduce ringing and ...
Page 10
IRAMS10UP60B 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0 Figure 3. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency + V =400V , T 7 150°C J 6.0 Sinusoidal Modulation 5.0 4.0 3.0 2.0 ...
Page 11
I OUT I 50 OUT I OUT Figure 5. Total Power Losses vs. PWM Switching Frequency, Sinusoidal modulation + V =400V , 150° ...
Page 12
IRAMS10UP60B 160 150 140 130 120 110 100 150° Sinusoidal Modulation Figure 7. Maximum Allowable Case temperature vs. Output RMS Current per Phase 160 T ...
Page 13
R EXT V 2.5 Therm R Therm 2.0 2.0 1.5 1.0 1.0 0.5 0.0 0.0 -40 -40 -30 -20 -20 -10 Figure 9. Thermistor Readout vs. Temperature (47kohm pull-up resistor, 5V) ...
Page 14
IRAMS10UP60B Figure 11. Switching Parameter Definitions V CE 50 Figure 11a. Input to Output Propagation turn-on Delay Time Figure 11c. Diode Reverse ...
Page 15
Ho Hin1,2,3 IC Driver Lo Lin1,2,3 Figure CT1. Switching Loss Circuit Ho Hin1,2,3 1k 10k Driver Lin1,2,3 5VZD Lo IN Figure CT2. S.C.SOA Circuit Ho Hin1,2,3 1k 10k Driver 5VZD Lin1,2 ...
Page 16
IRAMS10UP60B Package Outline 027-E2D24 IRAMS10UP60B note 1 Standard pin leadforming option Notes: Dimensions Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking 4- Tollerances ±0.5mm, unless otherwise stated For mounting instruction, ...
Page 17
Package Outline note 2 027-E2D24 IRAMS10UP60B-2 note 1 Pin leadforming option -2 Notes: Dimensions Marking for pin 1 identification 2- Product Part Number 3- Lot and Date code marking 4- Tollerances ±0.5mm, unless otherwise stated IR WORLD ...