MG100Q1JS50 TOSHIBA Semiconductor CORPORATION, MG100Q1JS50 Datasheet

MG100Q1JS50

Manufacturer Part Number

MG100Q1JS50

Description

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheet

1.MG100Q1JS50.pdf (6 pages)

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High Power Switching Applications

Chopper Applications

l High input impedance

l High speed : t

l Low saturation voltage

l Enhancement-mode

l The electrodes are isolated from case.

Equivalent Circuit

Maximum Ratings

Collector-emitter voltage

Gate-emitter voltage

Reverse voltage

Collector current

Forward current

Collector power dissipation (Tc = 25°C)

Junction temperature

Storage temperature range

Isolation voltage

Screw torque (Terminal / mounting)

Characteristics

: V

CE (sat)

= 0.5µs (max)

(Ta = 25°C)

= 4.0V (max)

1ms

TOSHIBA GTR Module Silicon N Channel IGBT

MG100Q1JS40

Symbol

CES

GES

―

Isol

stg

http://store.iiic.cc/

(AC 1 min.)

−40 ~ 125

Rating

1200

2500

3 / 3

±20

100

200

100

200

670

150

JEDEC

JEITA

TOSHIBA

Unit

N·m

°C

2-108A4A

MG100Q1JS40

―

2001-08-16

Unit: mm

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