MG100Q1JS50

Manufacturer Part NumberMG100Q1JS50
ManufacturerTOSHIBA Semiconductor CORPORATION
MG100Q1JS50 datasheet
 


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TOSHIBA GTR Module Silicon N Channel IGBT
MG100Q1JS40
High Power Switching Applications
Chopper Applications
l High input impedance
l High speed : t
= 0.5µs (max)
f
t
= 0.5µs (max)
rr
l Low saturation voltage
: V
= 4.0V (max)
CE (sat)
l Enhancement-mode
l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-emitter voltage
Gate-emitter voltage
Reverse voltage
DC
Collector current
1ms
DC
Forward current
1ms
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal / mounting)
JEDEC
JEITA
TOSHIBA
Symbol
Rating
Unit
V
1200
V
CES
V
±20
V
GES
V
1200
V
R
I
100
C
A
I
200
CP
I
100
F
A
I
200
FM
P
670
W
C
T
150
°C
j
T
−40 ~ 125
°C
stg
2500
V
V
Isol
(AC 1 min.)
3 / 3
N·m
1
http://store.iiic.cc/
MG100Q1JS40
Unit: mm
2-108A4A
2001-08-16