MG400Q1US2 TOSHIBA Semiconductor CORPORATION, MG400Q1US2 Datasheet

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MG400Q1US2

Manufacturer Part Number
MG400Q1US2
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

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High Power Switching Applications
Motor Control Applications
l High input impedance
l High speed : t
l Low saturation voltage
l Enhancement-mode
l The electrodes are isolated from case.
Equivalent Circuit
Maximum Ratings
Collector-emitter voltage
Gate-emitter voltage
Collector current
Forward current
Collector power dissipation (Tc = 25°C)
Junction temperature
Storage temperature range
Isolation voltage
Screw torque (Terminal : M4 / M6 / mounting)
: V
t
Characteristic
f
rr
CE(sat)
= 0.5µs (Max.)
= 0.5µs (Max.)
(Ta = 25°C)
= 4.0V (Max.)
1ms
1ms
DC
DC
TOSHIBA GTR Module Silicon N Channel IGBT
MG400Q1US41
Symbol
http://store.iiic.cc/
V
V
V
T
I
I
P
CES
GES
FM
I
CP
I
T
Isol
stg
C
F
C
j
1
Weight: 465g
(AC 1 minute)
JEDEC
EIAJ
TOSHIBA
−40 ~ 125
2 / 3 / 3
Rating
1200
2400
2500
±20
400
800
400
800
150
Unit
N·m
°C
°C
W
V
V
A
A
V
2-109A4A
MG400Q1US41
2001-05-11
Unit: mm

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