SI4943DY-T1-E3 Vishay Semiconductors, SI4943DY-T1-E3 Datasheet

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SI4943DY-T1-E3

Manufacturer Part Number
SI4943DY-T1-E3
Description
Manufacturer
Vishay Semiconductors
Datasheet

Specifications of SI4943DY-T1-E3

Case
SOP8
Date_code
09+

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Part Number
Manufacturer
Quantity
Price
Part Number:
SI4943DY-T1-E3
Manufacturer:
VISHAY
Quantity:
42 500
Part Number:
SI4943DY-T1-E3
Manufacturer:
VISHAY
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Part Number:
SI4943DY-T1-E3
Manufacturer:
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Quantity:
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Notes
a.
Document Number: 71682
S-21192—Rev. B, 29-Jul-02
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS (T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Continuous Drain Current (T
Pulsed Drain Current
continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
M
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
Surface Mounted on 1 ” x 1” FR4 Board.
i
DS
- 20
- 20
(V)
J
ti
t A bi
G
G
S
S
1
1
2
2
0.030 @ V
0.019 @ V
J
J
a
a
1
2
3
4
= 150_C)
= 150_C)
t
a
a
r
Parameter
Parameter
DS(on)
Top View
Dual P-Channel 20-V (D-S) MOSFET
SO-8
GS
GS
a
a
= - 4.5 V
= - 10 V
(W)
a
8
7
6
5
D
D
D
D
1
1
2
2
A
= 25_C UNLESS OTHERWISE NOTED)
Steady State
Steady State
t v 10 sec
T
T
T
T
I
New Product
A
A
A
A
D
- 8.4
- 6.7
= 25_C
= 70_C
= 25_C
= 70_C
(A)
G
1
Symbol
Symbol
P-Channel MOSFET
T
R
R
R
J
V
V
I
P
P
, T
DM
thJA
thJF
I
I
I
GS
DS
D
D
S
D
D
stg
D
1
FEATURES
D TrenchFETr Power MOSFET
APPLICATIONS
D Load Switching
D Battery Switching
S
1
D
- Computer
- Game Systems
- 2-Cell Li-lon
1
10 secs
Typical
- 8.4
- 6.7
- 1.7
2.0
1.3
45
85
26
- 55 to 150
"20
- 20
- 30
G
2
Steady State
P-Channel MOSFET
Maximum
Vishay Siliconix
- 6.3
- 5.1
- 0.9
62.5
1.1
0.7
110
35
D
2
S
2
D
Si4943DY
2
www.vishay.com
Unit
Unit
_C/W
_C
C/W
W
W
V
V
A
A
1

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