K6X0808C1D-TF55

Manufacturer Part NumberK6X0808C1D-TF55
ManufacturerSamsung
K6X0808C1D-TF55 datasheets
 


Specifications of K6X0808C1D-TF55

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K6X0808C1D Family
32Kx8 bit Low Power full CMOS Static RAM
FEATURES
Process Technology: Full CMOS
Organization: 32K x 8
Power Supply Voltage: 4.5~5.5V
Low Data Retention Voltage: 2V(Min)
Three state output and TTL Compatible
Package Type: 28-DIP-600B, 28-SOP-450,
28-TSOP1-0813.4F/R
PRODUCT FAMILY
Product Family Operating Temperature Vcc Range
K6X0808C1D-F
Industrial(-40~85 C)
K6X0808C1D-Q Automotive(-40~125 C)
1. The parameters are tested with 50pF test load
PIN DESCRIPTION
1
OE
2
A11
A9
3
4
A8
A14
1
28
VCC
A13
5
WE
6
2
A12
27
WE
VCC
7
Type1 - Forward
A14
8
3
A7
26
A13
A12
9
4
A6
25
A8
A7
10
A6
11
5
24
A5
A9
A5
12
A4
13
6
23
A11
A4
A3
14
28-DIP
7
22
OE
A3
28-SOP
8
21
A10
A3
14
A2
A4
13
9
20
CS
A1
A5
12
A6
11
10
19
I/O8
A0
A7
10
A12
9
11
18
I/O7
I/O1
A14
8
12
17
I/O6
VCC
Type1 - Reverse
I/O2
7
WE
6
13
16
I/O5
I/O3
A13
5
A8
4
14
15
I/O4
VSS
A9
3
A11
2
1
OE
Pin Name
Function
Pin Name
CS
Chip Select Input
I/O
~I/O
1
OE
Output Enable Input
Vcc
WE
Write Enable Input
Vss
A
~A
Address Inputs
NC
0
14
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.
GENERAL DESCRIPTION
The K6X0808C1D families are fabricated by SAMSUNG s
advanced CMOS process technology. The families support
verious operating temperature ranges and have various pack-
age types for user flexibility of system design. The families
also support low data retention voltage for battery back-up
operation with low data retention current.
Power Dissipation
Speed
Standby
(I
, Max)
SB1
15 A
4.5~5.5V
55
1)
/70ns
25 A
FUNCTIONAL BLOCK DIAGRAM
A10
28
CS
27
I/O8
26
I/O7
25
I/O6
24
I/O5
23
28-TSOP
22
I/O4
VSS
21
I/O3
20
I/O2
19
I/O1
18
Row
A0
17
Addresses
A1
16
A2
15
15
A2
16
A1
17
A0
18
I/O1
I/O
1
I/O2
19
20
I/O3
I/O
8
28-TSOP
VSS
21
I/O4
22
23
I/O5
24
I/O6
25
I/O7
26
I/O8
27
CS
28
A10
Function
CS
Data Inputs/Outputs
8
Control
WE
logic
Power
OE
Ground
No connect
2
CMOS SRAM
PKG Type
Operating
(I
Max)
CC2,
28-DIP-600B, 28-SOP-450,
28-TSOP1-0813.4F/R
25mA
28-SOP-450, 28-TSOP1-0813.4F
Clk gen.
Precharge circuit.
Row
Memory array
select
Data
I/O Circuit
cont
Column select
Data
cont
Column Addresses
Revision 1.0
December 2003