K4T1G164QE-HCF7 Samsung, K4T1G164QE-HCF7 Datasheet - Page 12

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K4T1G164QE-HCF7

Manufacturer Part Number
K4T1G164QE-HCF7
Description
Manufacturer
Samsung
Datasheet

Specifications of K4T1G164QE-HCF7

Date_code
10+
K4T1G044QE
K4T1G084QE
K4T1G164QE
6.0 Absolute Maximum DC Ratings
Symbol
Parameter
Voltage on V
pin relative to V
V
DD
DD
Voltage on V
pin relative to V
V
DDQ
DDQ
Voltage on V
pin relative to V
V
DDL
DDL
Voltage on any pin relative to V
V
V
IN,
OUT
T
Storage Temperature
STG
Note :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and
functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2
standard.
3. V
and V
must be within 300mV of each other at all times; and V
DD
DDQ
than 500mV, V
may be equal to or less than 300mV.
REF
4. Voltage on any input or I/O may not exceed voltage on V
7.0 AC & DC Operating Conditions
7.1 Recommended DC Operating Conditions (SSTL - 1.8)
Symbol
Parameter
V
Supply Voltage
DD
V
Supply Voltage for DLL
DDL
V
Supply Voltage for Output
DDQ
V
Input Reference Voltage
REF
V
Termination Voltage
TT
Note : There is no specific device V
supply voltage requirement for SSTL-1.8 compliance. However under all conditions V
DD
to V
.
DD
1. The value of V
may be selected by the user to provide optimum noise margin in the system. Typically the value of V
REF
x V
of the transmitting device and V
DDQ
REF
2. Peak to peak AC noise on V
may not exceed +/-2% V
REF
3. V
of transmitting device must track V
TT
REF
4. AC parameters are measured with V
, V
DD
SS
SS
SS
SS
must be not greater than 0.6 x V
REF
.
DDQ
Min.
1.7
1.7
1.7
0.49*V
0.50*V
DDQ
V
-0.04
REF
is expected to track variations in V
.
DDQ
(DC).
REF
of receiving device.
and V
tied together.
DDQ
DDL
12 of 45
DDR2 SDRAM
Rating
Units
- 1.0 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
- 0.5 V ~ 2.3 V
-55 to +100
. When V
and V
DDQ
DD
DDQ
Rating
Units
Typ.
Max.
1.8
1.9
V
1.8
1.9
V
1.8
1.9
V
0.51*V
mV
DDQ
DDQ
V
V
+0.04
V
REF
REF
must be less than or equal
DDQ
is expected to be about 0.5
REF
Rev. 1.1 December 2008
Notes
V
1
V
1
V
1
V
1
°C
1, 2
and V
are less
DDL
Notes
4
4
1,2
3

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