K4T1G164QE-HCF7 Samsung, K4T1G164QE-HCF7 Datasheet - Page 14

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K4T1G164QE-HCF7

Manufacturer Part Number
K4T1G164QE-HCF7
Description
Manufacturer
Samsung
Datasheet

Specifications of K4T1G164QE-HCF7

Date_code
10+
K4T1G044QE
K4T1G084QE
K4T1G164QE
7.6 Differential input AC logic Level
Symbol
Parameter
V
(AC)
AC differential input voltage
ID
V
(AC)
AC differential cross point voltage
IX
Note :
1. V
(AC) specifies the input differential voltage |V
ID
and V
is the complementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to V
CP
2. The typical value of V
(AC) is expected to be about 0.5 * V
IX
indicates the voltage at which differential input signals must cross.
3. For information related to V
value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak ampli-
PEAK
tude allowed for overshoot and undershoot.
V
TR
V
CP
7.7 Differential AC output parameters
Symbol
Parameter
V
(AC)
AC differential cross point voltage
OX
Note :
1. The typical value of V
(AC) is expected to be about 0.5 * V
OX
V
(AC) indicates the voltage at which differential output signals must cross.
OX
8.0 ODT DC electrical characteristics
PARAMETER/CONDITION
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm
Deviation of VM with respect to V
/2
DDQ
Note : Test condition for Rtt measurements
Measurement Definition for Rtt(eff): Apply V
V
(AC), V
(AC)(DC), and V
values defined in SSTL_18
IH
IL
DDQ
Rtt(eff) =
delta VM =
Measurement Definition for V
: Measure voltage (V
M
Min.
0.5
0.5 * V
- 0.175
DDQ
-V
| required for switching, where V
TR
CP
of the transmitting device and V
DDQ
V
DDQ
V
ID
V
SSQ
< Differential signal levels >
Min.
0.5 * V
DDQ
of the transmitting device and V
DDQ
SYMBOL
Rtt1(eff)
Rtt2(eff)
Rtt3(eff)
delta VM
(AC) and V
(AC) to test pin separately, then measure current I(V
IH
IL
-
V
(AC)
V
(AC)
IH
IL
I(
) - I(
)
V
(AC)
V
(AC)
IH
IL
2 x VM
- 1
x 100%
V
DDQ
) at test pin (midpoint) with no load.
M
14 of 45
DDR2 SDRAM
Max.
V
DDQ
0.5 * V
+ 0.175
DDQ
is the true input signal (such as CK, DQS, LDQS or UDQS)
TR
(AC) - V
(AC).
IH
IL
(AC) is expected to track variations in V
IX
Crossing point
V
V
IX or
OX
Max.
- 0.125
0.5 * V
+ 0.125
DDQ
(AC) is expected to track variations in V
OX
MIN
NOM
MAX
60
75
90
120
150
180
40
50
60
- 6
+ 6
(AC)) and I( V
IH
IL
Rev. 1.1 December 2008
Units
Notes
V
1
V
2
. V
(AC)
DDQ
IX
Units
Note
V
1
.
DDQ
UNITS
NOTES
ohm
1
ohm
1
ohm
1
%
1
(AC)) respectively.

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