K4T1G164QE-HCF7 Samsung, K4T1G164QE-HCF7 Datasheet - Page 15

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K4T1G164QE-HCF7

Manufacturer Part Number
K4T1G164QE-HCF7
Description
Manufacturer
Samsung
Datasheet

Specifications of K4T1G164QE-HCF7

Date_code
10+
K4T1G044QE
K4T1G084QE
K4T1G164QE
9.0 OCD default characteristics
Description
Output impedance
Output impedance step size for OCD calibration
Pull-up and pull-down mismatch
Output slew rate
Note :
1. Absolute Specifications (0°C ≤ T
≤ +95°C; V
CASE
2. Impedance measurement condition for output source DC current: V
values of V
between V
and V
OUT
DDQ
DDQ
V
/Iol must be less than 23.4 ohms for values of V
OUT
3. Mismatch is absolute value between pull-up and pull-down, both are measured at same temperature and voltage.
4. Slew rate measured from V
(AC) to V
(AC).
IL
IH
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is
guaranteed by design and characterization.
6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and represents only the DRAM uncertainty.
Output slew rate load :
7. DRAM output slew rate specification applies to 667Mb/sec/pin and 800Mb/sec/pin speed bins.
8. Timing skew due to DRAM output slew rate mismatch between DQS / DQS and associated DQ is included in tDQSQ and tQHS specification.
Parameter
Min
18ohm at norminal condition
See full strength default driver characteristics
on device operation specification
0
0
Sout
1.5
= +1.8V ±0.1V, V
= +1.8V ±0.1V)
DD
DDQ
= 1.7V; V
DDQ
OUT
- 280mV. Impedance measurement condition for output sink dc current: V
between 0V and 280mV.
OUT
V
TT
25 ohm
Output
Reference
Point
(V
)
OUT
15 of 45
DDR2 SDRAM
Nom
Max
Unit
ohm
1.5
ohm
4
ohm
5
V/ns
= 1420mV; (V
-V
)/Ioh must be less than 23.4 ohms for
OUT
DDQ
= 1.7V; V
DDQ
OUT
Rev. 1.1 December 2008
Notes
1,2
6
1,2,3
1,4,5,6,7,8
= 280mV;

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