K4T1G164QE-HCF7 Samsung, K4T1G164QE-HCF7 Datasheet - Page 19

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K4T1G164QE-HCF7

Manufacturer Part Number
K4T1G164QE-HCF7
Description
Manufacturer
Samsung
Datasheet

Specifications of K4T1G164QE-HCF7

Date_code
10+
K4T1G044QE
K4T1G084QE
K4T1G164QE
12.0 Input/Output capacitance
Parameter
Input capacitance, CK and CK
Input capacitance delta, CK and CK
Input capacitance, all other input-only pins
Input capacitance delta, all other input-only pins
Input/output capacitance, DQ, DM, DQS, DQS
Input/output capacitance delta, DQ, DM, DQS, DQS
13.0 Electrical Characteristics & AC Timing for DDR2-800/667
(0 °C < T
< 95 °C; V
= 1.8V + 0.1V; V
OPER
DDQ
13.1 Refresh Parameters by Device Density
Parameter
Refresh to active/Refresh command time
Average periodic refresh interval
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Speed
DDR2-800(E7)
Bin (CL - tRCD - tRP)
Parameter
min
tCK, CL=3
5
tCK, CL=4
3.75
tCK, CL=5
2.5
tCK, CL=6
-
tRCD
12.5
tRP
12.5
tRC
57.5
tRAS
45
Symbol
CCK
CDCK
CI
CDI
CIO
CDIO
= 1.8V + 0.1V)
DD
Symbol
256Mb
tRFC
0 °C ≤ T
≤ 85°C
CASE
tREFI
85 °C < T
≤ 95°C
CASE
DDR2-800(F7)
5-5-5
6-6-6
max
min
max
8
-
8
3.75
8
3
-
2.5
-
15
-
15
-
60
70000
45
70000
19 of 45
DDR2 SDRAM
DDR2-667
DDR2-800
Min
Max
Min
Max
1.0
2.0
1.0
2.0
x
0.25
x
0.25
1.0
2.0
1.0
1.75
x
0.25
x
0.25
2.5
3.5
2.5
3.5
x
0.5
x
0.5
512Mb
1Gb
2Gb
75
105
127.5
195
327.5
7.8
7.8
7.8
7.8
3.9
3.9
3.9
3.9
DDR2-667(E6)
5 - 5 - 5
min
max
-
5
8
8
3.75
8
8
3
8
8
-
-
-
15
-
-
15
-
-
60
-
45
70000
Rev. 1.1 December 2008
Units
pF
pF
pF
pF
pF
pF
4Gb
Units
ns
µs
7.8
µs
3.9
Units
ns
ns
ns
ns
ns
ns
ns
ns

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