K4T1G164QE-HCF7

Manufacturer Part NumberK4T1G164QE-HCF7
ManufacturerSamsung
K4T1G164QE-HCF7 datasheet
 


Specifications of K4T1G164QE-HCF7

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Page 29/45

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K4T1G044QE
K4T1G084QE
K4T1G164QE
V
DDQ
V
(AC)min
DQS
IH
V
(DC)min
IH
Note1
V
(DC)
REF
V
(DC)max
IL
V
(AC)max
IL
V
SS
V
DDQ
V
(AC)min
IH
V
(DC)min
IH
V
(DC)
REF
V
(DC)max
IL
V
(AC)max
IL
nominal
line
V
SS
Setup Slew Rate
Falling Signal
Note : DQS signal must be monotonic between V
Figure 8 - IIIustration of tangent line for tDS (single-ended DQS)
tDH
tDS
nominal
line
V
to ac
REF
region
tangent
line
∆TR
tangent line[V
Setup Slew Rate
=
Rising Signal
∆TF
tangent line[V
(DC) - V
(AC)max]
REF
IL
=
∆TF
(DC)max and V
IL
29 of 45
DDR2 SDRAM
tDS
tDH
tangent
line
V
to ac
REF
region
(AC)min - V
(DC)]
IH
REF
∆TR
(DC)min.
IH
Rev. 1.1 December 2008