K4T1G164QE-HCF7

Manufacturer Part NumberK4T1G164QE-HCF7
ManufacturerSamsung
K4T1G164QE-HCF7 datasheet
 

Specifications of K4T1G164QE-HCF7

Date_code10+  
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
Page 31
32
Page 32
33
Page 33
34
Page 34
35
Page 35
36
Page 36
37
Page 37
38
Page 38
39
Page 39
40
Page 40
41
42
43
44
45
Page 32/45

Download datasheet (2Mb)Embed
PrevNext
K4T1G044QE
K4T1G084QE
K4T1G164QE
DQS
DQS
V
DDQ
V
(AC)min
IH
V
(DC)min
IH
V
(DC)
REF
V
(DC)max
IL
V
(AC)max
IL
V
SS
Hold Slew Rate tangent line [ V
Rising Signal
Figure 11 - IIIustration of tangent line for tDH (differential DQS, DQS)
tDH
tDS
dc to V
REF
region
tangent
dc to V
line
REF
region
nominal
line
∆TR
(DC) - V
(DC)max ]
REF
IL
=
∆TR
tangent line [ V
Hold Slew Rate
=
Falling Signal
32 of 45
DDR2 SDRAM
tDH
tDS
nominal
line
tangent
line
∆TF
(DC)min - V
(DC) ]
IH
REF
∆TF
Rev. 1.1 December 2008