K4T1G164QE-HCF7 Samsung, K4T1G164QE-HCF7 Datasheet - Page 32

no-image

K4T1G164QE-HCF7

Manufacturer Part Number
K4T1G164QE-HCF7
Description
Manufacturer
Samsung
Datasheet

Specifications of K4T1G164QE-HCF7

Date_code
10+
K4T1G044QE
K4T1G084QE
K4T1G164QE
DQS
DQS
V
DDQ
V
(AC)min
IH
V
(DC)min
IH
V
(DC)
REF
V
(DC)max
IL
V
(AC)max
IL
V
SS
Hold Slew Rate tangent line [ V
Rising Signal
Figure 11 - IIIustration of tangent line for tDH (differential DQS, DQS)
tDH
tDS
dc to V
REF
region
tangent
dc to V
line
REF
region
nominal
line
∆TR
(DC) - V
(DC)max ]
REF
IL
=
∆TR
tangent line [ V
Hold Slew Rate
=
Falling Signal
32 of 45
DDR2 SDRAM
tDH
tDS
nominal
line
tangent
line
∆TF
(DC)min - V
(DC) ]
IH
REF
∆TF
Rev. 1.1 December 2008

Related parts for K4T1G164QE-HCF7