K4T1G164QE-HCF7 Samsung, K4T1G164QE-HCF7 Datasheet - Page 33

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K4T1G164QE-HCF7

Manufacturer Part Number
K4T1G164QE-HCF7
Description
Manufacturer
Samsung
Datasheet

Specifications of K4T1G164QE-HCF7

Date_code
10+
K4T1G044QE
K4T1G084QE
K4T1G164QE
V
DDQ
V
(AC)min
DQS
IH
V
(DC)min
IH
Note1
V
(DC)
REF
V
(DC)max
IL
V
(AC)max
IL
V
SS
V
DDQ
V
(AC)min
IH
V
(DC)min
IH
V
(DC)
REF
V
(DC)max
IL
V
(AC)max
IL
V
SS
Hold Slew Rate
Rising Signal
Note : DQS signal must be monotonic between V
Figure 12 - IIIustration of tangent line for tDH (single-ended DQS)
tDH
tDS
dc to V
REF
region
tangent
dc to V
line
REF
region
nominal
∆TR
tangent line [ V
(DC) - V
(DC)max ]
REF
IL
=
∆TR
Hold Slew Rate
Falling Signal
(DC)max and V
IL
33 of 45
DDR2 SDRAM
tDS
tDH
nominal
line
tangent
line
line
∆TF
tangent line [ V
(DC)min - V
(DC) ]
IH
REF
=
∆TF
(DC)min.
IH
Rev. 1.1 December 2008

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