IRFB4110 International Rectifier Corp., IRFB4110 Datasheet

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IRFB4110

Manufacturer Part Number

IRFB4110

Description

Manufacturer

International Rectifier Corp.

Datasheet

1.IRFB4110.pdf (8 pages)

Specifications of IRFB4110

Case

TO-220

Date_code

06+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IRFB4110

Manufacturer:

MITSUBISHI

Quantity:

10 000

Company:

H&T Electronics

H&T Electronics

Part Number:

IRFB4110

Quantity:

5 000

Company:

Bonase Electronics (HK) Co., Limited

Bonase Electronics (HK) Co., Limited

Part Number:

IRFB4110GPBF

Manufacturer:

IR

Quantity:

20

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

IRFB4110GPBF

Manufacturer:

IR

Quantity:

20 000

Company:

BOSTOCK HK LIMITED

BOSTOCK HK LIMITED

Part Number:

IRFB4110PBF

Manufacturer:

ST

0

Company:

Meier Automation Equipment Co., Limited

Meier Automation Equipment Co., Limited

Part Number:

IRFB4110PBF

Manufacturer:

IR

Quantity:

20 000

Company:

Amily Shenzhen XNWY Technology Co., Ltd

Amily Shenzhen XNWY Technology Co., Ltd

Part Number:

IRFB4110PBF

0

Company:

H&T Electronics

H&T Electronics

Part Number:

IRFB4110PBF

Quantity:

2 000

Company:

H&T Electronics

H&T Electronics

Part Number:

IRFB4110PBF

Quantity:

20 000

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Download datasheet (284Kb)

Benefits

l

l

l

I

I

I

I

P

V

dv/dt

T

T

E

I

E

R

R

R

Applications

l

l

l

l

Absolute Maximum Ratings

Avalanche Characteristics

Thermal Resistance

www.irf.com

D

D

D

DM

AR

J

STG

D

GS

AS (Thermally limited)

AR

θJC

θCS

θJA

@ T

@ T

@ T

@T

Improved Gate, Avalanche and Dynamic dv/dt

Ruggedness

Fully Characterized Capacitance and Avalanche

Enhanced body diode dV/dt and dI/dt Capability

High Efficiency Synchronous Rectification in SMPS

Uninterruptible Power Supply

High Speed Power Switching

Hard Switched and High Frequency Circuits

SOA

Symbol

Symbol

C

C

C

C

= 25°C

= 100°C

= 25°C

= 25°C

Continuous Drain Current, VGS @ 10V (Silicon Limited)

Continuous Drain Current, V

Continuous Drain Current, V

Pulsed Drain Current d

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Peak Diode Recovery f

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

Mounting torque, 6-32 or M3 screw

Single Pulse Avalanche Energy e

Avalanche Current d

Repetitive Avalanche Energy g

Junction-to-Case k

Case-to-Sink, Flat Greased Surface

Junction-to-Ambient j

Parameter

Parameter

GS

GS

@ 10V (Silicon Limited)

@ 10V (Wire Bond Limited)

http://store.iiic.cc/

V

R

I

I

D (Silicon Limited)

D (Package Limited)

DSS

DS(on)

G

Gate

typ.

IRFB4110PbF

max.

Typ.

G

See Fig. 14, 15, 22a, 22b

0.50

–––

–––

10lbxin (1.1Nxm)

-55 to + 175

Max.

180c

130c

HEXFET

120

670

370

± 20

300

190

S

D

2.5

5.3

Drain

D

0.402

Max.

–––

62

®

180A c

3.7m :

4.5m :

Power MOSFET

100V

120A

D

TO-220AB

Source

S

Units

Units

W/°C

°C/W

V/ns

mJ

mJ

°C

W

G

A

V

A

04/07/08

D

S

1

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