AT45DB081DSU ATMEL Corporation, AT45DB081DSU Datasheet

AT45DB081DSU

Manufacturer Part Number

AT45DB081DSU

Description

Manufacturer

ATMEL Corporation

Datasheet

1.AT45DB081DSU.pdf (53 pages)

Specifications of AT45DB081DSU

Case

SOP

Date_code

07+

Current page: 1 of 53
Download datasheet (2Mb)

Features

•

1. Description

The AT45DB081D is a 2.5V or 2.7V, serial-interface Flash memory ideally suited for a

wide variety of digital voice-, image-, program code- and data-storage applications.

The AT45DB081D supports RapidS serial interface for applications requiring very

high speed operations. RapidS serial interface is SPI compatible for frequencies up to

66 MHz. Its 8,650,752 bits of memory are organized as 4,096 pages of 256 bytes or

264 bytes each. In addition to the main memory, the AT45DB081D also contains two

SRAM buffers of 256/264 bytes each. The buffers allow the receiving of data while a

page in the main Memory is being reprogrammed, as well as writing a continuous

data stream. EEPROM emulation (bit or byte alterability) is easily handled with a self-

contained three step read-modify-write operation. Unlike conventional Flash memo-

ries that are accessed randomly with multiple address lines and a parallel interface,

Single 2.5V or 2.7V to 3.6V Supply

RapidS

User Configurable Page Size

Page Program Operation

Flexible Erase Options

Two SRAM Data Buffers (256/264 Bytes)

Continuous Read Capability through Entire Array

Low-power Dissipation

Hardware and Software Data Protection Features

Sector Lockdown for Secure Code and Data Storage

Security: 128-byte Security Register

JEDEC Standard Manufacturer and Device ID Read

100,000 Program/Erase Cycles Per Page Minimum

Data Retention – 20 Years

Industrial Temperature Range

Green (Pb/Halide-free/RoHS Compliant) Packaging Options

– SPI Compatible Modes 0 and 3

– 256 Bytes per Page

– 264 Bytes per Page

– Intelligent Programming Operation

– 4,096 Pages (256/264 Bytes/Page) Main Memory

– Page Erase (256 Bytes)

– Block Erase (2 Kbytes)

– Sector Erase (64 Kbytes)

– Chip Erase (8 Mbits)

– Allows Receiving of Data while Reprogramming the Flash Array

– Ideal for Code Shadowing Applications

– 7 mA Active Read Current Typical

– 25 µA Standby Current Typical

– 5 µA Deep Power Down Typical

– Individual Sector

– 64-byte User Programmable Space

– Unique 64-byte Device Identifier

Serial Interface: 66 MHz Maximum Clock Frequency

8-megabit

2.5-volt or

2.7-volt

DataFlash

AT45DB081D

3596F–DFLASH–8/07

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