2SB789 Panasonic, 2SB789 Datasheet
2SB789
Manufacturer Part Number
2SB789
Description
Manufacturer
Panasonic
Datasheets
1.2SB789A.pdf
(3 pages)
2.2SB789.pdf
(2 pages)
3.2SB789.pdf
(2 pages)
4.2SB789.pdf
(3 pages)
Specifications of 2SB789
Date_code
05+
Packing_info
SOT-89
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
2SB789
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Part Number:
2SB789A
Manufacturer:
PANASONIC/松下
Quantity:
20 000
Company:
Part Number:
2SB789A-R(TX)+
Manufacturer:
PANASONIC
Quantity:
1 100
Transistors
2SB0789, 2SB0789A
Silicon PNP epitaxial planar type
For low-frequency driver amplification
■ Features
■ Absolute Maximum Ratings T
Note) * : Print circuit board: Copper foil area of 1 cm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2002
• High collector-emitter voltage (Base open) V
• Large collector power dissipation P
Collector-base voltage
(Emitter open)
Collector-emitter voltage 2SB0789
(Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-emitter voltage
(Base open)
Emitter-base voltage (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. * 1: Pulse measurement
thickness of 1.7 mm for the collector portion.
* 2: Rank classification
Rank
Parameter
h
Parameter
FE1
90 to 155
2SB0789
2SB0789A
2SB0789A
*
2SB0789
2SB0789A
* 1
Q
* 1
* 1
a
Symbol
C
= 25°C ± 3°C
V
V
V
Symbol
T
V
V
h
I
P
CBO
I
T
V
V
CEO
EBO
a
CP
130 to 220
stg
FE1
h
C
CE(sat)
BE(sat)
C
C
j
f
CEO
EBO
FE2
= 25°C
T
ob
* 2
R
−55 to +150
2
CEO
or more, and the board
Rating
I
I
V
V
I
I
V
V
−100
−120
−100
−120
− 0.5
C
E
C
C
150
CE
CE
CB
CB
Note) The part number in the parenthesis shows conventional part number.
−5
−1
= −100 µA, I
= −10 µA, I
= −500 mA, I
= −500 mA, I
1
SJC00056CED
= −10 V, I
= −5 V, I
= −10 V, I
= −10 V, I
Conditions
Unit
C
°C
°C
C
W
E
V
V
V
A
A
C
E
= −500 mA
B
= 0
B
B
(2SB789, 2SB789A)
= 50 mA, f = 200 MHz
= −150 mA
= 0, f = 1 MHz
= 0
= −50 mA
= −50 mA
Marking Symbol:
0.4
1.5
±0.08
±0.1
3˚
• 2SB0789: D
• 2SB0789A: E
1
3.0
4.5
1.6
−100
−120
Min
−5
90
50
±0.15
±0.1
±0.2
2
0.5
±0.08
3
− 0.85
− 0.2
Typ
120
MiniP3-F1 Package
45˚
−1.20
− 0.6
Max
1.5
220
30
±0.1
0.4
1: Base
2: Collector
3: Emitter
±0.04
Unit: mm
MHz
Unit
pF
V
V
V
V
1
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