AT28C64B-25JC

Manufacturer Part NumberAT28C64B-25JC
ManufacturerATMEL Corporation
AT28C64B-25JC datasheets
 

Specifications of AT28C64B-25JC

Date_code06+Packing_infoPLCC
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Features
Fast Read Access Time – 150 ns
Automatic Page Write Operation
– Internal Address and Data Latches for 64 Bytes
Fast Write Cycle Times
– Page Write Cycle Time: 10 ms Maximum
– 1 to 64-byte Page Write Operation
Low Power Dissipation
– 40 mA Active Current
– 100 µA CMOS Standby Current
Hardware and Software Data Protection
DATA Polling and Toggle Bit for End of Write Detection
High Reliability CMOS Technology
– Endurance: 100,000 Cycles
– Data Retention: 10 Years
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
JEDEC Approved Byte-wide Pinout
Commercial and Industrial Temperature Ranges
Description
The AT28C64B is a high-performance electrically-erasable and programmable read
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 150 ns with power dissipation of just 220 mW. When the device is
deselected, the CMOS standby current is less than 100 µA.
Pin Configurations
Pin Name
Function
A0 - A12
Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7
Data Inputs/Outputs
NC
No Connect
DC
Don’t Connect
PLCC
Top View
A6
5
29
A8
A5
6
28
A9
A4
7
27
A11
A3
8
26
NC
A2
9
25
OE
A1
10
24
A10
A0
11
23
CE
NC
12
22
I/O7
I/O0
13
21
I/O6
Note:
PLCC package pins 1 and 17 are
DON’T CONNECT.
(continued)
PDIP, SOIC
Top View
NC
1
28
VCC
A12
2
27
WE
A7
3
26
NC
A6
4
25
A8
A5
5
24
A9
A4
6
23
A11
A3
7
22
OE
A2
8
21
A10
A1
9
20
CE
A0
10
19
I/O7
I/O0
11
18
I/O6
I/O1
12
17
I/O5
I/O2
13
16
I/O4
GND
14
15
I/O3
TSOP
Top View
OE
1
28
A11
2
27
A9
3
26
A8
4
25
NC
5
24
WE
6
23
VCC
7
22
NC
8
21
A12
9
20
A7
10
19
A6
11
18
A5
12
17
A4
13
16
A3
14
15
64K (8K x 8)
Parallel
EEPROM with
Page Write and
Software Data
Protection
AT28C64B
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
Rev. 0270H–12/99
A1
A2
1