L2SA812SLT1G Leshan Radio Company, L2SA812SLT1G Datasheet
L2SA812SLT1G
Manufacturer Part Number
L2SA812SLT1G
Description
Manufacturer
Leshan Radio Company
Specifications of L2SA812SLT1G
Date_code
03+
Packing_info
SOT-23
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
L2SA812SLT1G
Manufacturer:
LRC/乐山
Quantity:
20 000
General Purpose Transistors
FEATURE
DEVICE MARKING AND ORDERING INFORMATION
MAXIMUM RATINGS
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector current-continuoun
THERMAL CHARATEERISTICS
Total Device Dissipation FR-5 Board, (1)
T
Derate above 25
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
Derate above 25
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
A
L2SA812QLT1G
L2SA812QLT3G
L2SA812RLT1G
L2SA812RLT3G
L2SA812SLT1G
L2SA812SLT3G
=25
Device
High Voltage: V
Epitaxial planar type.
NPN complement: L2SC1623
We declare that the material of product compliance with RoHS requirements.
o
C
Rating
o
o
CEO
C
C
Characteristic
= -50 V.
A
=25
Marking
o
M7
M6
M7
M6
C
M8
M8
Symbol
V
V
V
CEO
CBO
I
EBO
C
L2SA812
Symbol
Tj ,Tstg
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
R
R
-150
-50
-60
P
P
-6
Shipping
D
D
JA
JA
-55 to +150
mAdc
Max
556
200
200
417
1.8
2.4
LESHAN RADIO COMPANY, LTD.
Unit
V
V
V
L2SA812QLT1G Series
mW/
mW/
o
o
C
C
Unit
mW
mW
o
C
/
/
W
W
o
o
C
C
1
BASE
1
SOT-23
2
3
COLLECTOR
2
EMITTER
3
1/5
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