MRF18085B Motorola, MRF18085B Datasheet

MRF18085B

Manufacturer Part Number

MRF18085B

Description

Manufacturer

Motorola

Datasheets

1.MRF18085B.pdf (12 pages)

2.MRF18085B.pdf (12 pages)

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

The RF MOSFET Line

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

frequencies from 1.9 to 2.0 GHz. Suitable for TDMA, CDMA, and multicarrier

amplifier applications.

• GSM and GSM EDGE Performance, Full Frequency Band (1930 - 1990

• Internally Matched, Controlled Q, for Ease of Use

• High Gain, High Efficiency, and High Linearity

• Integrated ESD Protection

• Designed for Maximum Gain and Insertion Phase Flatness

• Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power,

• Excellent Thermal Stability

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates

• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ESD PROTECTION CHARACTERISTICS

REV 3

(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf .

Motorola, Inc. 2004

MOTOROLA RF DEVICE DATA

Drain - Source Voltage

Gate - Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Operating Junction Temperature

Thermal Resistance, Junction to Case

Human Body Model

Machine Model

Designed for GSM and GSM EDGE base station applications with

MHz)

@ f = 1930 MHz

40µ″ Nominal.

Derate above 25°C

Select Documentation/Application Notes - AN1955.

Power Gain - 12.5 dB (Typ) @ 85 Watts CW

Efficiency - 50% (Typ) @ 85 Watts CW

NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

= 25°C

Test Conditions

Freescale Semiconductor, Inc.

Characteristic

For More Information On This Product,

Rating

Go to: www.freescale.com

Symbol

DSS

θJC

stg

MRF18085BLSR3

MRF18085BR3

MRF18085BR3 MRF18085BLSR3

1.9 - 1.99 GHz, 85 W, 26 V

LATERAL N - CHANNEL

RF POWER MOSFETs

CASE 465A - 06, STYLE 1

CASE 465 - 06, STYLE 1

GSM/GSM EDGE

M3 (Minimum)

1 (Minimum)

MRF18085BLSR3

- 65 to +150

MRF18085BR3

Value (1)

- 0.5, +15

Class

Value

1.56

0.79

273

200

NI - 780S

NI - 780

Order this document

by MRF18085B/D

Watts

W/°C

°C/W

Unit

Vdc

°C

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