MRF6P27160H Freescale Semiconductor, Inc, MRF6P27160H Datasheet

MRF6P27160H

Manufacturer Part Number

MRF6P27160H

Description

Manufacturer

Freescale Semiconductor, Inc

Datasheets

1.MRF6P27160H.pdf (12 pages)

2.MRF6P27160H.pdf (12 pages)

3.MRF6P27160H.pdf (12 pages)

Specifications of MRF6P27160H

Date_code

08+

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

MRF6P27160H

Manufacturer:

FREESCALE

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MRF6P27160HR5

Manufacturer:

FREESCALE

Quantity:

1 400

Company:

Meier Automation Equipment Co., Limited

Part Number:

MRF6P27160HR5

Manufacturer:

FREESCALE

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MRF6P27160HR6

Manufacturer:

FREESCALE

Quantity:

1 400

Company:

Meier Automation Equipment Co., Limited

Part Number:

MRF6P27160HR6

Manufacturer:

FREESCALE

Quantity:

20 000

Current page: 1 of 12
Download datasheet (510Kb)

RF Device Data

Freescale Semiconductor

Technical Data

RF Power Field Effect Transistor

N - Channel Enhancement - Mode Lateral MOSFET

2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.

To be used in Class AB and Class C for WLL applications.

• Typical Single- Carrier N - CDMA Performance: V

• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 160 Watts CW

Features

• Characterized with Series Equivalent Large - Signal Impedance Parameters

• Internally Matched for Ease of Use

• Qualified Up to a Maximum of 32 V

• Integrated ESD Protection

• Lower Thermal Resistance Package

• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth

• Low Gold Plating Thickness on Leads, 40

• RoHS Compliant

• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings

Table 2. Thermal Characteristics

Drain- Source Voltage

Gate- Source Voltage

Total Device Dissipation @ T

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

Thermal Resistance, Junction to Case

Designed for CDMA base station applications with frequencies from 2600 to

1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

mA, P

Paging, Traffic Codes 8 Through 13) Channel Bandwidth =

1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.

Output Power

Applications

Derate above 25°C

Case Temperature 79°C, 160 W CW

Case Temperature 71°C, 35 W CW

Power Gain — 14.6 dB

Drain Efficiency — 22.6%

ACPR @ 885 kHz Offset — - 47.8 dBc in 30 kHz Bandwidth

the MTTF calculators by product.

Select Documentation/Application Notes - AN1955.

out

= 35 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync,

= 25°C

Characteristic

Rating

Operation

″ Nominal.

= 28 Volts, I

= 1800

Symbol

DSS

θJC

stg

Document Number: MRF6P27160H

2600- 2700 MHz, 35 W AVG., 28 V

MRF6P27160HR6

LATERAL N - CHANNEL

CASE 375D - 05, STYLE 1

RF POWER MOSFET

SINGLE N - CDMA

- 65 to +150

Value

- 0.5, +68

- 0.5, +12

Value

3.45

0.29

0.31

603

150

200

NI - 1230

(1,2)

MRF6P27160HR6

Rev. 1, 5/2006

W/°C

°C/W

Unit

Vdc

°C

Related parts for MRF6P27160H

Related keywords

MRF6P27160H datasheet
MRF6P27160H data sheet
MRF6P27160H pdf datasheet
MRF6P27160H component
MRF6P27160H part
MRF6P27160H distributor
MRF6P27160H RoHS
MRF6P27160H datasheet download