RN1102FS TOSHIBA Semiconductor CORPORATION, RN1102FS Datasheet

RN1102FS

Manufacturer Part Number

RN1102FS

Description

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheets

1.RN1101FS.pdf (8 pages)

2.RN1102FS.pdf (8 pages)

Specifications of RN1102FS

Date_code

10+

Packing_info

SOD-723

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

RN1102FS

Manufacturer:

TOSHIBA/东芝

Quantity:

20 000

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

RN1102FS(TPL3)

Manufacturer:

Toshiba

Quantity:

19 007

Current page: 1 of 8
Download datasheet (140Kb)

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

•

Equivalent Circuit and Bias Resistor Values

Maximum Ratings

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

Incorporating a bias resistor into a transistor reduces parts count.

Complementary to RN2101FS~RN2106FS

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

Characteristics

(Ta = 25°C)

RN1101FS~RN1106FS

RN1101FS~1106FS

RN1101FS~1104FS

RN1105FS, 1106FS

RN1101FS,RN1102FS,RN1103FS

RN1104FS,RN1105FS,RN1106FS

RN1101FS

RN1102FS

RN1103FS

RN1104FS

RN1105FS

RN1106FS

Type No.

R1 (kΩ)

4.7

2.2

4.7

Symbol

CBO

CEO

EBO

stg

R2 (kΩ)

−55~150

Rating

4.7

150

Unit

°C

RN1101FS~RN1106FS

Weight: 0.0006g (typ.)

JEDEC

JEITA

TOSHIBA

fSM

0.1±0.05

0.8±0.05

1.0±0.05

2-1E1A

1.BASE

2.EMITTER

3.COLLECOTR

2004-03-01

―

Unit: mm

0.1±0.05

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