RN1104FT TOSHIBA Semiconductor CORPORATION, RN1104FT Datasheet

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RN1104FT

Manufacturer Part Number
RN1104FT
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheet

Specifications of RN1104FT

Date_code
05+
Packing_info
SOT-723

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RN1104FT(TE85L)
Manufacturer:
TOSH
Quantity:
4 606
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
Maximum Ratings
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
High-density mount is possible because of devices housed in very thin
TESM packages.
Incorporating a bias resistor into a transistor reduces parts count.
Reducing the parts count enable the manufacture of ever more compact
equipment and save assembly cost.
Wide range of resistor values are available to use in various circuit
designs.
Complementary to RN2101FT~RN2106FT
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
B
R1
Characteristics
C
E
(Ta = 25°C)
RN1105FT, RN1106FT
RN1101FT, RN1102FT, RN1103FT
RN1104FT, RN1105FT, RN1106FT
RN1101FT~1106FT
RN1101FT~1104FT
RN1101FT~1106FT
RN1101FT
RN1102FT
RN1103FT
RN1104FT
RN1105FT
RN1106FT
Type No.
R1 (kΩ)
4.7
2.2
4.7
10
22
47
Symbol
V
V
V
T
CBO
CEO
EBO
P
I
T
stg
C
C
1
j
R2 (kΩ)
4.7
10
22
47
47
47
−55~150
Rating
100
100
150
50
50
10
5
Weight:0.0022 g (typ.)
RN1101FT~RN1106FT
JEDEC
JEITA
TOSHIBA
Unit
mW
mA
°C
°C
V
V
V
2-1B1A
2004-03-01
Unit: mm

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