RN6001

Manufacturer Part NumberRN6001
ManufacturerTOSHIBA Semiconductor CORPORATION
RN6001 datasheets
 

Specifications of RN6001

Date_code05+Packing_infoSOT-89
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
Motor Drive Circuit Applications
Power Amplifier Applications
Power Switching Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Small flat package
l P
= 1~2W (mounted on ceramic substrate)
C
l Complementary to RN5001
Equivalent Circuit
Maximum Ratings
(Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature range
* : Mounterd on ceramic substrate (250mm
RN6001
Symbol
Rating
Unit
V
−30
V
CBO
V
−30
V
CEO
V
−5
V
EBO
I
−2
A
C
I
−0.4
A
B
P
500
mW
C
P
1000
mW
*
C
T
150
°C
j
T
−55~150
°C
stg
2
× 0.8t)
1
RN6001
Unit: mm
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05g (typ.)
Marking
2001-10-29